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参数资料
| 型号： | CPV364M4UPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 电源模块 |
| 英文描述： | Trans IGBT Module N-CH 600V 20A 13-Pin IMS-2 |
| 中文描述： | IGBT Transistors 600 Volt 10 Amp |
| 文件页数： | 7/11页 |
| 文件大小： | 240K |
| 代理商： | CPV364M4UPBF |
CPV364M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-13
5
Document Number: 94489
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
th
J
C
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Therm
a
lR
e
s
p
onse
(Z
)
P
t
2
1
t
DM
Notes:
1. Duty factor D = t
/ t
2. Peak T = P
x Z
+ T
12
J
DM
thJC
C
1
10
100
0
1000
2000
3000
4000
V
, Collector-to-Emitter Voltage (V)
C
,C
apaci
tance
(
pF)
CE
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
0
20
40
60
80
100
120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
G
a
te
-to
-E
m
itte
rV
o
lta
g
e
(V
)
G
GE
V
= 400V
I
= 10A
CC
C
0
10
20
30
40
50
0.40
0.45
0.50
0.55
0.60
0.65
0.70
R
, Gate Resistance (
Ω)
Tot
al
S
w
it
chi
n
g
Losses
(m
J)
G
V
= 480V
V
= 15V
T
= 25 C
I
= 10A
CC
GE
J
C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Tot
a
lS
w
it
chi
n
g
Losses
(m
J)
J
°
R
= 10
V
= 15V
V
= 480V
G
GE
CC
I =
A
20
C
I =
A
10
C
I =
A
5
C
Ω
5.0
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