参数资料
型号: ALD114904APAL
厂商: Advanced Linear Devices Inc
文件页数: 7/11页
文件大小: 0K
描述: MOSFET N-CH 10.6V DUAL 8PDIP
产品目录绘图: 8-Pin Plastic Dip Package
标准包装: 50
系列: EPAD®
FET 型: 2 个 N 沟道(双)
FET 特点: 耗尽模式
漏极至源极电压(Vdss): 10.6V
电流 - 连续漏极(Id) @ 25° C: 12mA
开态Rds(最大)@ Id, Vgs @ 25° C: 500 欧姆 @ 3.6V
Id 时的 Vgs(th)(最大): 380mV @ 1µA
功率 - 最大: 500mW
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
其它名称: 1014-1061
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
TRANSFER CHARACTERISTICS
5
2.5
-55 ° C ≤ T A ≤ +125 ° C
1.6
1.2
T A = 25 ° C
V DS = +10V
VGS(TH) = -3.5V
VGS(TH) = -1.3V
VGS(TH) = -0.4V
0
-2.5
-5
0.8
0.4
0.0
V GS(TH)     = 0.0 V
VGS(TH) = +0.2V
VGS(TH) = +1.4V
VGS(TH) = +0.8V
1
10
100
1000
-4
-2
0
2
4
6
8
10
DRAIN SOURCE ON CURRENT ( μ A)
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
GATE-SOURCE VOLTAGE (V)
SUBTHRESHOLD CHARACTERISTICS
0.6
VGS(TH)=-3.5V
2.5
2.0
0.5
VGS(TH)=-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
1.5
0.3
1.0
0.5
25 ° C
V GS(th) = 0.4V
0.2
0.0
0.0
-0.5
55 ° C
V GS(th) = 0.2 V
0.1
0.2
0.5
1.0
2.0
5.0
100000 10000
1000
100
10
1
0.1
DRAIN-SOURCE ON VOLTAGE (V)
TRANCONDUCTANCE vs. DRAIN-SOURCE
ON CURRENT
DRAIN -SOURCE CURRENT (nA)
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
1.2
0.9
0.6
T A = 25 ° C
V DS = +10V
4.0
3.0
2.0
V DS = +0.1V I D = 1.0 μ A
V t = 1.4V
0.3
1.0
0.0
0
V t = 0.0V
V t = 0.2V
V t = 0.8V
V t = 0.4V
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
DRAIN -SOURCE ON CURRENT(mA)
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
GATE THRESHOLD VOLTAGE
AMBIENT TEMPERATURE ( ° C)
THRESHOLD VOLTAGES
vs. AMBIENT TEMPERATURES
0.3
0.2
0.1
0
-0.1
V D = 0.1V
25 ° C
2.0
1.0
0.0
-1.0
-2.0
VGS(th) = 0.0V
VGS(th) = -0.4V
VGS(th) = -1.3V
IDS = +1 μ A
VDS = +0.1V
-0.2
-0.3
55 ° C
-3.0
-0.4
-4.0
VGS(th) = -3.5V
10000
1000
100
10
1
0.1
-25
25
75
125
DRAIN-SOURCE CURRENT (nA)
AMBIENT TEMPERATURE ( O C)
ALD114804/ALD114804A/ALD114904/ALD114904A
Advanced Linear Devices
7 of 11
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