参数资料
型号: CS8312YDR8
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IC PREDRIVER IGBT IGNITION 8SOIC
产品变化通告: Product Obsolescence 30/Dec/2003
标准包装: 2,500
配置: 低端
输入类型: 非反相
延迟时间: 30µs
电流 - 峰: 5mA
配置数: 1
输出数: 1
电源电压: 7 V ~ 10 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: CS8312YDR8OS
CS8312
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage
Digital Input Currents
Internal Power Dissipation (T A = 25 ° C)
Junction Temperature Range
Storage Temperature Range
Electrostatic Discharge (Human Body Model)
Rating
Value
–0.3 to 12
2.0
700
–40 to +150
–55 to +165
2.0
Unit
V
mA
mW
° C
° C
kV
Lead Temperature Soldering
Wave Solder (through hole styles only) Note 1.
Reflow (SMD styles only) Note 2.
260 peak
230 peak
° C
° C
1. 10 seconds max.
2. 60 seconds max above 183 ° C
*The maximum package power dissipation must be observed.
ELECTRICAL CHARACTERISTICS (7.0 V ≤ V CC ≤ 10 V, –40 ° C ≤ T A ≤ 125 ° C,
–0.2 V ≤ Differential Ground Voltage ≤ 0.8 V; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
General
Power Supply Including Ripple Voltage
Supply Ripple Frequency
Differential Ground Frequency
7.0
10
10
10
60
60
V
kHz
kHz
Quiescent Current, I Q
Turn On
Turn Off
Supply Voltage Rejection
Differential Ground Rejection Ratio
Differential Ground Current Ratio
V CTRL = 5.5 V
V CTRL = –0.3 V
V CTRL = 5.5 V
V CTRL = 5.5 V
V CTRL = –0.3 V,
30
30
15
5.0
3.0
mA
mA
dB
dB
mA
(V SENSE– – V GND )DC = 1.0 V
(V SENSE– – V GND )AC = 0.6 V
Unity Gain Bandwidth
Turn On Delay
Turn Off Delay
V CTRL = 5.5 V
CTRL Increasing
CTRL Decreasing
400
30
30
kHz
μ s
μ s
Control Function
Input Voltage Range
I CTRL = 2.0 mA
–0.3
5.5
V
Input Threshold
Turn On
Turn Off
Hysteresis
Voltage
Input Capacitance
CTRL Increasing
CTRL Decreasing
I CTRL = 10 μ A max
1.5
0.4
3.5
2.0
1.1
50
V
V
V
V
pF
Current Limit Increase Function
Input Voltage Range
I CTRL = 2.0 mA
–0.3
5.5
V
Input Threshold
Turn On
Turn Off
Hysteresis
Voltage
CLI Increasing
CLI Decreasing
I CLI = 10 μ A max
1.5
0.4
3.5
2.0
1.1
V
V
V
V
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