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参数资料
| 型号： | CSC2002M |
| 厂商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | NPN硅外延平面晶体管 |
| 文件页数： | 1/3页 |
| 文件大小： | 145K |
| 代理商： | CSC2002M |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
CSC2002
TO-92
Plastic Package
Designed for use in Driver Stage of High Voltage Audio Equipments.
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Collector Power Dissipation
PC
Storage Temperature
Tstg
- 55 to +150
Junction Temperature
Tj
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
Collector Cut Off Current
ICBO
VCB=60V, IE = 0
100
nA
Emitter Cut Off Current
IEBO
VEB=5V, IC = 0
100
nA
DC Current Gain
hFE
(1) *
VCE=1V, IC=50mA
90
400
VCE=2V, IC=300mA
30
Collector Emitter Saturation Voltage
VCE (sat) *
IC=300mA, IB=30mA
0.6
V
Base Emitter Saturation Voltage
VBE (sat) *
IC=300mA, IB=30mA
1.2
V
Base Emitter Voltage
VBE *
VCE=6V, IC=10mA
0.6
0.7
V
Transition Frequency
fT
VCE=6V, IC= -10mA,
50
MHz
Collector to Base Capacitance
Cob
IE=0, VCB=6V, f=1MHz
15
pF
* Pulsed PW <350
s, Duty Cycle <2%
hFE
(1) Classification
M : 90 - 180,
mA
mW
C
UNITS
V
VALUE
60
5
300
60
600
C
+150
L : 135 - 270,
K : 200 - 400
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CSC2003 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
| CSC2003K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
| CSC2003L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
| CSC2003M | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
| CSC2046 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:代替TI TSC2046 AKM4182 AR7643 |
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