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参数资料
| 型号： | CSC2712 |
| 厂商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 硅外延平面晶体管 |
| 文件页数： | 2/3页 |
| 文件大小： | 38K |
| 代理商： | CSC2712 |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
VCBO
max.
60 V
Collector-emitter voltage (open base)
VCEO
max.
50 V
Emitter-base voltage (open collector)
VEBO
max.
5 V
Collector current (d.c.)
IC
max.
150 mA
Base current
IB
max.
30 mA
Total power dissipation at Tamb = 25°C
Ptot
max.
150 mW
Junction temperature
Tj
max.
150 ° C
Storage temperature
Tstg
–50 to +150 ° C
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cut-off current
IE = 0; VCB = 60 V
ICBO
max.
100 nA
Emitter cut-off current
IC = 0; VEB = 5 V
IEBO
max.
100 nA
Saturation voltage
IC = 100 mA; IB = 10 mA
VCEsat
max.
250 mV
D.C. current gain
IC = 2 mA; VCE = 6 V
hFE
min.
70
max.
700
Y
min.
120
max.
240
GR(G)
min.
200
max.
400
BL(L)
min.
350
max.
700
Transition frequency
IC = 1 mA; VCE = 10 V
fT
min.
80 MHz
Noise figure at Rg = 10 kW
VCE = 6 V; IC = 0.1 mA
f = 1 kHz
NF
max.
10 dB
CSC2712
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相关代理商/技术参数 |
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| CSC2712BL | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712BLL | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712G | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712GR | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712GRG | 制造商:CDIL 制造商全称:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
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