参数资料
型号: CSPEMI201AG
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 0K
描述: IC EMI FILTER 2CH SPKR 5-WLCSP
标准包装: 1
类型: 低通
技术: RC(Pi)
通道数: 2
中心 / 截止频率: 31MHz(截止值)
衰减值: 35dB @ 800MHz ~ 2.7GHz
电阻 - 通道 (Ohms): 10
值: R = 10 欧姆,C = 100pF
ESD 保护:
滤波器阶数: 2nd
应用: 音频
封装/外壳: 5-UFBGA,WLCSP
尺寸/尺寸: 0.056" L x 0.037" W(1.41mm x 0.93mm)
高度: 0.026"(0.65mm)
包装: 标准包装
工作温度: -40°C ~ 85°C
其它名称: CSPEMI201AGOSDKR
CSPEMI201AG
Table 1. PIN DESCRIPTIONS
PACKAGE / PINOUT DIAGRAMS
5 ? bump CSP Package
Top View
Bottom View
Pin
Name
Description
(Bumps Down View)
(Pins Up View)
A1
A3
B2
SPKR_IN1
SPKR_IN2
GND
Speaker Input 1 (from audio circuitry)
Speaker Input 2 (from audio circuitry)
Device Ground
Orientation
Marking
A
+
1 2 3
Pin “A1”
C1
C3
C1
C3
SPKR_OUT1 Speaker Output 1 (to speaker)
SPKR_OUT1 Speaker Output 2 (to speaker)
B
C
Marking
A1
A1
B2
A3
CSPEMI201A
CSP Package
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Parameter
Rating
? 65 to +150
100
200
Units
° C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Rating
? 40 to +85
Units
° C
Symbol
R
C
I LEAK
V SIG
Parameter
Resistance
Capacitance
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
Conditions
V IN = 5.0 V
I LOAD = 10 mA
Min
9
80
5
? 15
Typ
10
100
7
? 10
Max
11
120
1.0
15
? 5
Units
W
pF
m A
V
V ESD
V CL
f C
In ? system ESD Withstand Voltage
a) Human Body Model, MIL ? STD ? 883, Method 3015
b) Contact Discharge per IEC 61000 ? 4 ? 2 Level 4
Clamping Voltage during ESD Discharge
MIL ? STD ? 883 (Method 3015), 8 kV
Positive Transients
Negative Transients
Cut ? off frequency
Z SOURCE = 50 W , Z LOAD = 50 W
(Note 2)
(Notes 2 and 3)
R = 10 W , C = 100 pF
± 15
± 8
+15
? 19
31
kV
V
MHz
1. T A = 25 ° C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
http://onsemi.com
2
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