MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
Power Dissipation
PD
1.65
W*
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
76
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
MIN
NPN PNP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100A
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100A
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
20
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
35
40
75
mV
CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE (SAT)
SILICON TRANSISTORS
TLM832D CASE
Central
Semiconductor Corp.
TM
R1 (15-November 2006)
MARKING CODES:
CTLM3410-M832D: CFG
CTLM7410-M832D: CFH
CTLM3474-M832D: CFJ
Bottom View
Top View
APPLICATIONS
Switching Circuits
DC / DC Converters
LCD Backlighting
Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDA’s,
Notebook PC’s, etc.
DESCRIPTION: The Central Semiconductor Corp.
CTLM3410-M832D (Dual NPN), CTLM7410-M832D
(Dual PNP), and CTLM3474-M832D (Complementary
NPN & PNP) are Low VCE (SAT) Transistors packaged
in the small, thermally efficient, 3x2mm Tiny Leadless
Module (TLM) surface mount case. These devices are
designed for applications where small size, operational
efficiency, and low energy consumption are the prime
requirements. Due to its leadless package design this
device is capable of dissipating up to 4 times the power
of similar devices in comparable sized surface mount
packages.
FEATURES
Dual Chip Device
High Current (1.0A) Transistors
Low VCE(SAT) Transistors
(450mV @ IC = 1.0A Max)
High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
Small TLM 3x2mm Leadless Surface Mount Package
Complementary Devices
*FR-4 Epoxy PCB with copper mounting pad area of 54mm
2