参数资料
型号: CURC306-G
厂商: Comchip Technology
文件页数: 1/4页
文件大小: 99K
描述: DIODE ULT FAST 3A 800V DO-214AB
标准包装: 3,000
二极管类型: 标准
电压 - (Vr)(最大): 800V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 1.7V @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 75ns
电流 - 在 Vr 时反向漏电: 5µA @ 800V
安装类型: 表面贴装
封装/外壳: DO-214AB,SMC
供应商设备封装: DO-214AB,(SMC)
包装: 带卷 (TR)
SMD
Ultra
Fast
Recovery
Rectifiers
Reverse V
oltage: 50 to 1000 Volts
Forward Current: 3.0
Amp
RoHS Device
Page 1
REV:B
Features
-Ideal for surface mount applications.
-Easy pick and place.
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
-Fast recovery time: 50~75nS.
-Low leakage current.
Mechanical data
-Case: JEDEC DO-214AB, molded plastic.
-T
erminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.21 grams
CURC301-G Thru. CURC307-G
Maximum Ratings and Electrical Characteristics
Dimensions
in
inches
and
(millimeter)
DO-214AB
(SMC)
QW-BU004
CURC
301-G
are
2
lan
d area.
Notes: 1. Thermal resistance
fro
m junction to lead mounted on P.C.B. with 8.0×8.0
m
m squ
Comchip Technology CO., LTD.
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
Max. average forward current
Max. instantaneous forward
voltage
at
3.0A
Reverse recovery time
OC
Max. DC reverse current at TA=25
OC
rated DC blocking voltage TA=125
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
CURC
302-G
CURC
303-G
CURC
304-G
CURC
305-G
Units
Symbol
Parameter
VRRM
VDC
VRMS
IFSM
IO
VF
Trr
IR
RθJL
TJ
TSTG
50
50
35
100
100
70
1.0
200
200
140
400
400
280
100
3.0
1.3
5.0
150
20
150
-55 to +150
600
600
420
V
V
V
A
A
V
nS
μA
OC/W
OC
O
C
CURC
306-G
CURC
307-G
800
800
560
1.7
75
1000
1000
700
50
0.245(6.22)
0.220(5.59)
0.126(3.20)
0.114(2.90)
0.320(8.13)
0.305(7.75)
0.012(0.305)
0.006(0.152)
0.008(0.203)Max
0.060(1.52)
0.030(0.76)
0.103(2.62)
0.079(2.06)
0.280(7.11)
0.260(6.60)
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