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参数资料
| 型号： | CVDGF1.25-5 |
| 厂商： | J S T MFG CO LTD |
| 元件分类： | 终端 |
| 英文描述： | 1.65 mm2, BULLET TERMINAL |
| 文件页数： | 1/1页 |
| 文件大小： | 76K |
| 代理商： | CVDGF1.25-5 |
APTGT300A60D3G
APT
G
T
300A60D3
G
–
Rev
0
Septem
ber
,2008
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
400
IC
Continuous Collector Current
TC = 80°C
300
ICM
Pulsed Collector Current
TC = 25°C
600
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
940
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
600A @ 520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
2
1
3
5
Q2
7
6
Q1
4
VCES = 600V
IC = 300A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Phase leg
Trench + Field Stop IGBT
Power Module
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