- 您现在的位置：买卖IC网 > PDF目录295352 > CY14E102N-BA20XI (CYPRESS SEMICONDUCTOR CORP) 128K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48 PDF资料下载
参数资料
| 型号： | CY14E102N-BA20XI |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48 |
| 封装： | 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48 |
| 文件页数： | 1/21页 |
| 文件大小： | 628K |
| 代理商： | CY14E102N-BA20XI |
ADVANCE
CY14E102L, CY14E102N
2-Mbit (256K x 8/128K x 16) nvSRAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 001-45755 Rev. *A
Revised June 27, 2008
Features
■ 15 ns, 20 ns, 25 ns, and 45 ns access times
■ Internally organized as 256K x 8 (CY14E102L) or 128K x 16
(CY14E102N)
■ Hands off automatic STORE on power down with only a small
capacitor
■ STORE to QuantumTrap
nonvolatile elements initiated by
software, device pin, or AutoStore on power down
■ RECALL to SRAM initiated by software or power up
■ Infinite read, write, and recall cycles
■ 200,000 STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 5V +10% operation
■ Commercial and Industrial temperatures
■ 48-pin FBGA, 44 and 54-pin TSOP II packages
■ Pb-free and RoHS compliance
Functional Description
The Cypress CY14E102L/CY14E102N is a fast static RAM, with
a nonvolatile element in each memory cell. The memory is
organized as 256K words of 8 bits each or 128K words of 16 bits
each.
The
embedded
nonvolatile
elements
incorporate
QuantumTrap technology, producing the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while independent nonvolatile data reside in the highly
reliable QuantumTrap cell. Data transfers from the SRAM to the
nonvolatile elements (the STORE operation) takes place
automatically at power down. On power up, data is restored to
the SRAM (the RECALL operation) from the nonvolatile memory.
Both the STORE and RECALL operations are also available
under software control.
Note
1. Address A0 - A17 and Data DQ0 - DQ7 for x8 configuration, Address A0 - A16 and Data DQ0 - DQ15 for x16 configuration.
A0 - A17
Address
WE
OE
CE
VCC
VSS
VCAP
DQ0 - DQ7
HSB
CY14E102L
BHE
BLE
Logic Block Diagram
CY14E102N
相关PDF资料 |
PDF描述 |
|---|---|
| CY14E102N-ZSP45XIT | 128K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 |
| CY21DF-FREQ2-OUT23 | VCXO, CLOCK, 65 MHz - 160 MHz, CMOS/TTL OUTPUT |
| CY23CH-FREQ-OUT23 | VCXO, CLOCK, 1.25 MHz - 65 MHz, CMOS/TTL OUTPUT |
| CY22DF-FREQ2-OUT23 | VCXO, CLOCK, 65 MHz - 160 MHz, CMOS/TTL OUTPUT |
| CY12FF-FREQ1-OUT23 | VCXO, CLOCK, 1.25 MHz - 65 MHz, CMOS/TTL OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY14E102N-ZS45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 2MB 128KX16 44 PIN TSOPII COMMERCIAL TEMP - Trays |
| CY14E108L-BA45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 8MB 1024KX8 FBGA COMMERCIAL TEMP - Trays |
| CY14E108N-BA45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 8MB 512KX16 5 VOLT FBGA COMMERCIAL TEMP - Trays |
| CY14E256LA-SZ25XI | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| CY14E256LA-SZ25XIT | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。