参数资料
型号: CY2CC810SCT
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: 时钟及定时
英文描述: 1:10 Clock Fanout Buffer
中文描述: LOW SKEW CLOCK DRIVER, 10 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
封装: 0.300 INCH, SOIC-20
文件页数: 2/7页
文件大小: 115K
代理商: CY2CC810SCT
COMLINK
SERIES
CY2CC810
Document #: 38-07056 Rev. *C
Page 2 of 7
Maximum Ratings
[1][2]
Storage Temperature: ................................–
65
°
C to + 150
°
C
Ambient Temperature:...................................
40
°
C to +85
°
C
Supply Voltage to Ground Potential
V
CC
..................................................................
0.5V to 4.6V
Input.................................................................
0.5V to 5.8V
Supply Voltage to Ground Potential
(Outputs only)...........................................
0.5V to V
DD
+ 1V
DC Output Voltage....................................
0.5V to V
DD
+ 1V
Power Dissipation........................................................0.75W
Notes:
1.
Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is intended to be a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
2.
DC Electrical Characteristics
@ 3.3V (see
Figure 5
)
Parameter
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OK
O
OFF
V
H
Description
Conditions
Min.
2.3
Typ.
3.3
0.2
Max.
Unit
V
V
V
V
uA
uA
uA
V
mA
uA
mV
Output High Voltage
Output Low Voltage
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input High Current
Clamp Diode Voltage
Continuous Clamp Current
Power-down Disable
Input Hysteresis
V
DD
= Min., V
IN
= V
IH
or V
IL
V
DD
= Min., V
IN
= V
IH
or V
IL
Guaranteed Logic High Level
Guaranteed Logic Low Level
V
DD
= Max.
V
DD
= Max.
V
DD
= Max., V
IN
= V
DD
(Max.)
V
DD
= Min., I
IN
=
18 mA
V
DD
= Max., V
OUT
= GND
V
DD
= GND, V
OUT
= < 4.5V
V
DD
= Min., V
IN
= V
IH
or V
IL
I
OH
=
12 mA
I
OL
= 12 mA
0.5
5.8
0.8
1
1
20
1.2
50
100
2
V
IN
= 2.7V
V
IN
= 0.5V
0.7
80
DC Electrical Characteristics
@ 2.5V (see
Figure 1
)
Parameter
Description
Conditions
Min.
1.8
1.6
Typ.
Max.
Unit
V
V
V
V
V
uA
uA
uA
V
mA
uA
mV
V
OH
Output High Voltage
V
DD
= Min., V
IN
= V
IH
or V
IL
I
OH
=
7 mA
I
OH
= 12 mA
I
OL
= 12 mA
V
OL
V
IH
V
IL
I
IH
I
IL
I
I
V
IK
I
OK
O
OFF
V
H
Output Low Voltage
Input High Voltage
Input Low Voltage
Input High Current
Input Low Current
Input High Current
Clamp Diode Voltage
Continuous Clamp Current
Power-down Disable
Input Hysteresis
V
DD
= Min., V
IN
= V
IH
or V
IL
Guaranteed Logic High Level
Guaranteed Logic Low Level
V
DD
= Max.
V
DD
= Max.
V
DD
= Max., V
IN
= V
DD
(Max.)
V
DD
= Min., I
IN
=
18 mA
V
DD
= Max., V
OUT
= GND
V
DD
= GND, V
OUT
= < 4.5V
0.65
5.0
0.8
1
1
20
1.2
50
100
1.6
V
IN
= 2.4V
V
IN
= 0.5V
0.7
80
Capacitance
Parameter
Cin
Cout
Description
Test Conditions
Min.
Typ.
2.5
6.5
Max.
Unit
pF
pF
Input Capacitance
Output Capacitance
V
IN
= 0V
V
OUT
= 0V
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