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参数资料
| 型号： | CY74FCT823ATSOCTG4 |
| 厂商： | Texas Instruments |
| 文件页数： | 10/15页 |
| 文件大小： | 0K |
| 描述： | IC 9BIT BUS INT F-F 3ST 24-SOIC |
| 标准包装： | 2,000 |
| 系列： | 74FCT |
| 功能： | 主复位 |
| 类型： | D 型总线 |
| 输出类型： | 三态非反相 |
| 元件数： | 1 |
| 每个元件的位元数： | 9 |
| 延迟时间 - 传输： | 6ns |
| 触发器类型： | 正边沿 |
| 输出电流高，低： | 32mA，64mA |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-SOIC（0.295"，7.50mm 宽） |
| 包装： | 带卷 (TR) |
CY74FCT823T
9-BIT BUS-INTERFACE REGISTER
WITH 3-STATE OUTPUTS
SCCS069A – OCTOBER 2001 – REVISED NOVEMBER 2001
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIK
VCC = 4.75 V,
IIN = –18 mA
–0.7
–1.2
V
VOH
VCC 475 V
IOH = –32 mA
2
V
VOH
VCC = 4.75 V
IOH = –15 mA
2.4
3.3
V
VOL
VCC = 4.75 V,
IOL = 64 mA
0.3
0.55
V
Vhys
All inputs
0.2
V
II
VCC = 5.25 V,
VIN = VCC
5
A
IIH
VCC = 5.25 V,
VIN = 2.7 V
±1
A
IIL
VCC = 5.25 V,
VIN = 0.5 V
±1
A
IOZH
VCC = 5.25 V,
VOUT = 2.7 V
10
A
IOZL
VCC = 5.25 V,
VOUT = 0.5 V
–10
A
IOS
VCC = 5.25 V,
VOUT = 0 V
–60
–120
–225
mA
Ioff
VCC = 0 V,
VOUT = 4.5 V
±1
A
ICC
VCC = 5.25 V,
VIN ≤ 0.2 V,
VIN ≥ VCC – 0.2 V
0.1
0.2
mA
ICC
VCC = 5.25 V, VIN = 3.4 V§, f1 = 0, Outputs open
0.5
2
mA
ICCD
VCC = 5.25 V, One bit switching at 50% duty cycle, Outputs open,
OE = EN = GND, VIN ≤ 0.2 V or VIN ≥ VCC – 0.2 V
0.06
0.12
mA/
MHz
#
One bit switching
at f1 = 5 MHz
VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
0.7
1.4
IC#
VCC = 5.25 V,
Outputs open
1
at 50% duty cycle
VIN = 3.4 V or GND
1.2
3.4
mA
IC#
Outputs open,
OE = EN = GND
Eight bits switching
at f1 = 2.5 MHz
VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
1.6
3.2||
mA
1
at 50% duty cycle
VIN = 3.4 V or GND
3.9
12.2||
Ci
5
10
pF
Co
9
12
pF
Typical values are at VCC = 5 V, TA = 25°C.
Not more than one output should be shorted at a time. Duration of short should not exceed one second. The use of high-speed test apparatus and/or
sample-and-hold techniques are preferable to minimize internal chip heating and more accurately reflect operational values. Otherwise, prolonged
shorting of a high output can raise the chip temperature well above normal and cause invalid readings in other parametric tests. In any sequence
of parameter tests, IOS tests should be performed last.
§ Per TTL-driven input (VIN = 3.4 V); all other inputs at VCC or GND
This parameter is derived for use in total power-supply calculations.
# IC
= ICC + ICC × DH × NT + ICCD (f0/2 + f1 × N1)
Where:
IC
= Total supply current
ICC
= Power-supply current with CMOS input levels
ICC = Power-supply current for a TTL high input (VIN = 3.4 V)
DH
= Duty cycle for TTL inputs high
NT
= Number of TTL inputs at DH
ICCD = Dynamic current caused by an input transition pair (HLH or LHL)
f0
= Clock frequency for registered devices, otherwise zero
f1
= Input signal frequency
N1
= Number of inputs changing at f1
All currents are in milliamperes and all frequencies are in megahertz.
|| Values for these conditions are examples of the ICC formula.
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