参数资料
型号: CY7C008V
英文描述: Memory
中文描述: 内存
文件页数: 1/20页
文件大小: 301K
代理商: CY7C008V
3.3V 4K/8K/16K/32K x 8/9
Dual-Port Static RAM
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
Document #: 38-06051 Rev. *A
Revised December 27, 2002
25/0251
Features
True Dual-Ported memory cells which allow simulta-
neous access of the same memory location
4K/8K/16K/32K x 8 organizations
(CY7C0138AV/144AV/006AV/007AV)
4K/8K/16K/32K x 9 organizations
(CY7C0139AV/145AV/016AV/017AV)
0.35-micron CMOS for optimum speed/power
High-speed access: 20/25 ns
Low operating power
— Active: ICC = 115 mA (typical)
— Standby: ISB3 = 10 A (typical)
Fully asynchronous operation
Automatic power-down
Expandable data bus to 16/18 bits or more using Master/
Slave chip select when using more than one device
On-chip arbitration logic
Semaphores included to permit software handshaking
between ports
INT flag for port-to-port communication
Pin select for Master or Slave
Commercial and Industrial Temperature Ranges
Available in 68-pin PLCC (all) and 64-pin TQFP
(7C006AV & 7C144AV)
Pin-compatible and functionally equivalent to
IDT70V05, 70V06, and 70V07.
Notes:
1.
I/O0–I/O7 for x8 devices; I/O0–I/O8 for x9 devices.
2.
A0–A11 for 4K devices; A0–A12 for 8K devices; A0–A13 for 16K devices; A0–A14 for 32K devices;
3.
BUSY is an output in master mode and an input in slave mode.
I/O
Control
Address
Decode
A0L–A11–14L
CEL
OEL
R/WL
BUSYL
I/O
Control
Interrupt
Semaphore
Arbitration
SEML
INTL
M/S
A0L–A11–14L
True Dual-Ported
RAM Array
A0R–A11–14R
CER
OER
R/WR
BUSYR
SEMR
INTR
Address
Decode
A0R–A11–14R
[1]
[3]
R/WL
OEL
I/O0L–I/O7/8L
CEL
R/WR
OER
I/O0R–I/O7/8R
CER
12–15
8/9
12–15
8/9
12–15
[2]
Logic Block Diagram
For the most recent information, visit the Cypress web site at www.cypress.com
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