参数资料
型号: CY7C057V-15AXI
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
中文描述: 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP144
封装: 20 X 20 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TQFP-144
文件页数: 4/26页
文件大小: 713K
代理商: CY7C057V-15AXI
CY7C056V
CY7C057V
Document #: 38-06055 Rev. *E
Page 12 of 26
Switching Waveforms
Notes
25. R/W is HIGH for read cycles.
26. Device is continuously selected. CE0 = VIL, CE1=VIH, and B0, B1, B2, B3, WA, BA are valid. This waveform cannot be used for semaphore reads.
27. OE = VIL.
28. Address valid prior to or coinciding with CE0 transition LOW and CE1 transition HIGH.
29. To access RAM, CE0 = VIL, CE1=VIH, B0, B1, B2, B3, WA, BA are valid, and SEM = VIH. To access semaphore, CE0 = VIH, CE1=VIL and SEM = VIL or CE0
and SEM=VIL, and CE1= B0 = B1 = B2 = B3, =VIH.
tRC
tAA
tOHA
DATA VALID
PREVIOUS DATA VALID
DATA OUT
ADDRESS
tOHA
Read Cycle No. 1 (Either Port Address Access)[25, 26, 27]
tACE
tLZOE
tDOE
tHZOE
tHZCE
DATA VALID
tLZCE
tPU
tPD
ISB
ICC
DATA OUT
B2, B3, WA, BA
CE0, CE1, B0,B1,
CURRENT
Read Cycle No. 2 (Either Port CE/OE Access)[25, 28, 29]
SELECT VALID
OE
DATA OUT
tRC
ADDRESS
tAA
tOHA
CE0, CE1
tLZCE
tABE
tHZCE
tACE
tLZCE
Read Cycle No. 3 (Either Port)[25, 27, 28, 29]
B0, B1, B2,
B3, WA, BA
BYTE SELECT VALID
CHIP SELECT VALID
相关PDF资料
PDF描述
CY7C057V-15AXC 3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
CY7C0832V-167AXC 256K X 18 DUAL-PORT SRAM, 4 ns, PQFP120
CY7C0851AV-133AXC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-133BBC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-167AXC FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
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