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参数资料
| 型号： | CY7C0851AV-133AXC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| 中文描述： | 64K X 36 DUAL-PORT SRAM, 4 ns, PQFP176 |
| 封装： | 24 X 24 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-176 |
| 文件页数： | 10/32页 |
| 文件大小： | 971K |
| 代理商： | CY7C0851AV-133AXC |
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CY7C0850AV, CY7C0851AV
CY7C0852AV, CY7C0853AV
Document #: 38-06070 Rev. *H
Page 18 of 32
Figure 10. Bank Select Read[26, 27]
Switching Waveforms (continued)
Q3
Q1
Q0
Q2
A0
A1
A2
A3
A4
A5
Q4
A0
A1
A2
A3
A4
A5
tSA
tHA
tSC
tHC
tSA
tHA
tSC
tHC
tSC
tHC
tSC tHC
tCKHZ
tDC
tCD2
tCKLZ
tCD2
tCKHZ
tCKLZ
tCD2
tCKHZ
tCKLZ
tCD2
tCH2
tCL2
tCYC2
CLK
ADDRESS(B1)
CE(B1)
DATAOUT(B2)
DATAOUT(B1)
ADDRESS(B2)
CE(B2)
tCYC2
tCL2
tCH2
tHC
tSC
tHW
tSW
tHA
tSA
tHW
tSW
tCD2
tCKHZ
tSD tHD
NO OPERATION
WRITE
READ
CLK
CE
R/W
ADDRESS
DATAIN
DATAOUT
An
An+1
An+2
Dn+2
An+3
An+4
Qn
Qn+3
Qn+1
tCD2
tCKLZ
Notes
26. In this depth-expansion example, B1 represents Bank #1 and B2 is Bank #2; each bank consists of one Cypress CY7C0851AV/CY7C0852AV device from this data
sheet. ADDRESS(B1) = ADDRESS(B2).
27. ADS = CNTEN= B0 – B3 = OE = LOW; MRST = CNTRST = CNT/MSK = HIGH.
28. Output state (HIGH, LOW, or high-impedance) is determined by the previous cycle control signals.
29. During “No Operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity.
30. CE0 = OE = B0 – B3 = LOW; CE1 = R/W = CNTRST = MRST = HIGH.
31. CE0 = B0 – B3 = R/W = LOW; CE1 = CNTRST = MRST = CNT/MSK = HIGH. When R/W first switches low, since OE = LOW, the Write operation cannot be completed
(labelled as no operation). One clock cycle is required to three-state the I/O for the Write operation on the next rising edge of CLK.
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C0851AV-133BBC | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0851AV-167AXC | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0851AV-167BBC | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0852AV-133BBC | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
| CY7C0851AV-133AXI | FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C0851AV-133AXI | 功能描述:静态随机存取存储器 2MB (64Kx36) 3.3v 133MHz Synch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C0851AV-133BBC | 制造商:Cypress Semiconductor 功能描述: 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 2.25MBIT 64KX36 4.7NS 172FBGA - Trays 制造商:Rochester Electronics LLC 功能描述: |
| CY7C0851AV-133BBI | 功能描述:静态随机存取存储器 2MB (64Kx36) 3.3v 133MHz Synch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C0851AV-167AC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 2.25MBIT 64KX36 4NS 176TQFP - Trays |
| CY7C0851AV-167AXC | 功能描述:静态随机存取存储器 3.3V, 64Kx36 Sync Dual Port RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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