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参数资料
| 型号： | CY7C09179A-9AC |
| 英文描述： | SYNC SRAM|32KX9|CMOS|QFP|100PIN|PLASTIC |
| 中文描述： | 同步静态存储器| 32KX9 |的CMOS | QFP封装| 100引脚|塑料 |
| 文件页数： | 2/20页 |
| 文件大小： | 301K |
| 代理商： | CY7C09179A-9AC |
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 10 of 20
Notes:
29. R/W must be HIGH during all address transitions.
30. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM.
31. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
32. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and
data to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse
can be as short as the specified tPWE.
33. Transition is measured
±500 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
34. To access RAM, CE = VIL, SEM = VIH.
35. During this period, the I/O pins are in the output state, and input signals must not be applied.
36. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
Switching Waveforms (continued)
tAW
tWC
tPWE
tHD
tSD
tHA
CE
R/W
OE
DATA OUT
DATA IN
ADDRESS
tHZOE
tSA
tHZWE
tLZWE
Write Cycle No. 1: R/W Controlled Timing[29, 30, 31, 32]
[33]
[32]
[34]
[35]
tAW
tWC
tSCE
tHD
tSD
tHA
CE
R/W
DATA IN
ADDRESS
tSA
Write Cycle No. 2: CE Controlled Timing[29, 30, 31, 36]
[34]
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| CY7C09179V-12AC | 功能描述:IC SRAM 288KBIT 12NS 100LQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| CY7C09179V-12AXC | 功能描述:静态随机存取存储器 3.3V 32Kx9 COM Sync Dual Port 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C09179V-6AXC | 功能描述:静态随机存取存储器 3.3V 32Kx9 COM Sync Dual Port 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| CY7C09189-9AC | 功能描述:IC SRAM 576KBIT 67MHZ 100LQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| CY7C09189V-12AC | 制造商:Cypress Semiconductor 功能描述: |
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