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参数资料
| 型号： | CY7C1011CV33-15BVC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 128K x 16 Static RAM |
| 中文描述： | 128K X 16 STANDARD SRAM, 15 ns, PBGA48 |
| 封装： | 6 X 8 MM, 1 MM HEIGHT, VFBGA-48 |
| 文件页数： | 7/11页 |
| 文件大小： | 284K |
| 代理商： | CY7C1011CV33-15BVC |
CY7C1011CV33
Document #: 38-05232 Rev. *C
Page 5 of 11
tSCE
CE LOW to Write End
7
8
10
ns
tAW
Address Set-up to Write End
7
8
10
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-up to Write Start
0
ns
tPWE
WE Pulse Width
7
8
10
ns
tSD
Data Set-up to Write End
5
6
7
ns
tHD
Data Hold from Write End
0
ns
tLZWE
WE HIGH to Low-Z[7]
333
ns
tHZWE
WE LOW to High-Z[6, 7]
56
7
ns
tBW
Byte Enable to End of Write
7
8
10
ns
AC Switching Characteristics Over the Operating Range (continued)[4]
Parameter
Description
-10
-12
-15
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[10, 11]
Notes:
10. Device is continuously selected. OE, CE, BHE and/or BHE = VIL.
11. WE is HIGH for read cycle.
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C1011CV33-15BVI | 128K x 16 Static RAM |
| CY7C1011CV33-15ZC | 128K x 16 Static RAM |
| CY7C1011CV33-15ZI | 128K x 16 Static RAM |
| CY7C106B-12VC | 256K x 4 Static RAM |
| CY7C106B-15VC | 256K x 4 Static RAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C1011CV33-15BVI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 15ns 48-Pin VFBGA 制造商:Rochester Electronics LLC 功能描述:2MB (128KX16) FAST ASYNCH SRAM 3.3V - Bulk |
| CY7C1011CV33-15BVIT | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| CY7C1011CV33-15Z | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1011CV33-15ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1011CV33-15ZI | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 3.3V 2M-Bit 128K x 16 15ns 44-Pin TSOP-II |
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