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参数资料
| 型号： | CY7C106B |
| 厂商： | Cypress Semiconductor Corp. |
| 英文描述： | 256K x 4 Static RAM |
| 中文描述： | 256K × 4静态RAM |
| 文件页数： | 8/10页 |
| 文件大小： | 161K |
| 代理商： | CY7C106B |
CY7C106B
CY7C1006B
Document #: 38-05037 Rev. **
Page 7 of 10
Write Cycle No. 1 (CE Controlled)[14, 15]
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[14, 15]
Notes:
14. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
15. Data I/O is high impedance if OE = VIH.
Switching Waveforms (continued)
C106B–8
tWC
DATA VALID
tAW
tSA
tPWE
tHA
tHD
tSD
tSCE
ADDRESS
CE
DATA I/O
WE
DATA VALID
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
C106B–9
ADDRESS
CE
WE
DATA I/O
OE
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C1371BV25-83BGC | 512K X 36 ZBT SRAM, 10 ns, PBGA119 |
| CY7C341B-25JC | OT PLD, 40 ns, PQCC84 |
| CY7C341B-25JI | OT PLD, 40 ns, PQCC84 |
| CY7C341B-35JC | OT PLD, 55 ns, PQCC84 |
| CY7C341B-35JI | OT PLD, 55 ns, PQCC84 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C106B-20VC | 制造商:Rochester Electronics LLC 功能描述:1MB (256K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C106B-20VCT | 制造商:Rochester Electronics LLC 功能描述:1MB (256K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C106B-25VC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 1M-Bit 256K x 4-Bit 25ns 28-Pin SOJ 制造商:Rochester Electronics LLC 功能描述:1MB (256K X 4)- FAST ASYNCH SRAM - Bulk |
| CY7C106B-25VCT | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C106BN-15VC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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