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参数资料
| 型号： | CY7C1373BV25 |
| 英文描述： | Memory |
| 中文描述： | 内存 |
| 文件页数： | 4/9页 |
| 文件大小： | 194K |
| 代理商： | CY7C1373BV25 |
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 4 of 9
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter
Description
Conditions
Min.
Max.
Unit
VDR
VCC for Data Retention
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
2.0
V
ICCDR
Data Retention Current
300
A
tCDR
[3]
Chip Deselect to Data Retention Time
0
ns
tR
Operation Recovery Time
200
s
Data Retention Waveform
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
Switching Waveforms
Read Cycle No. 1[9, 10]
Read Cycle No. 2 (OE Controlled)[10, 11]
Notes:
9.
Device is continuously selected. OE, CE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
CURRENT
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C1373CV25 | Memory |
| CY7C138 | Memory |
| CY7C1380B | Memory |
| CY7C1380B-133AC | x36 Fast Synchronous SRAM |
| CY7C1380B-133AI | x36 Fast Synchronous SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C1373BV25-100AC | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1373BV25-117AC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1373C-100AC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 8.5ns 100-Pin TQFP |
| CY7C1373C-117AC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 18MBIT 1MX18 7.5NS 100TQFP - Bulk |
| CY7C1373D-100AXC | 功能描述:静态随机存取存储器 1Mx18 3.3V NoBL Sync PL 静态随机存取存储器 COM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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