参数资料
型号: CY7C1387BV25
英文描述: Memory
中文描述: 内存
文件页数: 3/9页
文件大小: 194K
代理商: CY7C1387BV25
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 3 of 9
AC Test Loads and Waveforms
Switching Characteristics[4] Over the Operating Range
7C10191B-10
7C1019B-12
7C1019B-15
Parameter
Description
Min.Max.Min.Max.Min.Max.
Unit
Read Cycle
tRC
Read Cycle Time
10
12
15
ns
tAA
Address to Data Valid
10
12
15
ns
tOHA
Data Hold from Address Change
3
ns
tACE
CE LOW to Data Valid
101215
ns
tDOE
OE LOW to Data Valid
5
6
7
ns
tLZOE
OE LOW to Low Z
0
ns
tHZOE
OE HIGH to High Z[5, 6]
56
7
ns
tLZCE
CE LOW to Low Z[6]
33
3
ns
tHZCE
CE HIGH to High Z[5, 6]
56
7
ns
tPU
CE LOW to Power-Up
0
ns
tPD
CE HIGH to Power-Down
10
12
15
ns
Write Cycle[7, 8]
tWC
Write Cycle Time
10
12
15
ns
tSCE
CE LOW to Write End
8
9
10
ns
tAW
Address Set-Up to Write End
7
8
10
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-Up to Write Start
0
ns
tPWE
WE Pulse Width
7
8
10
ns
tSD
Data Set-Up to Write End
5
6
8
ns
tHD
Data Hold from Write End
0
ns
tLZWE
WE HIGH to Low Z[6]
33
3
ns
tHZWE
WE LOW to High Z[5, 6]
56
7
ns
Notes:
4.
Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
5.
tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
6.
At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7.
The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
8.
The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
≤ 3 ns
OUTPUT
R1 480
R1 480
R2
255
R2
255
167
Equivalent to:
VENIN EQUIVALENT
1.73V
TH
相关PDF资料
PDF描述
CY7C1388-20PC x9 SRAM
CY7C1388-20VC x9 SRAM
CY7C1388-25PC x9 SRAM
CY7C1388-25VC x9 SRAM
CY7C1388-35PC x9 SRAM
相关代理商/技术参数
参数描述
CY7C1387BV25-150AC 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C1387BV25-150BGC 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述:
CY7C1387BV25-167AC 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述:
CY7C1387BV25-167BGC 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Cypress Semiconductor 功能描述:
CY7C1387C-167AC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Single 3.3V 18M-Bit 1M x 18 3.4ns 100-Pin TQFP