参数资料
型号: CY7C199-35VC
英文描述: x8 SRAM
中文描述: x8的SRAM
文件页数: 5/9页
文件大小: 194K
代理商: CY7C199-35VC
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 5 of 9
Write Cycle No. 1 (CE Controlled)[12, 13]
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13]
Notes:
12. Data I/O is high impedance if OE = VIH.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
14. During this period the I/Os are in the output state and input signals should not be applied.
Switching Waveforms (continued)
tWC
DATA VALID
tAW
tSA
tPWE
tHA
tHD
tSD
tSCE
CE
ADDRESS
WE
DATA I/O
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
DATAIN VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE 14
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CY7C199-35VCT x8 SRAM
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相关代理商/技术参数
参数描述
CY7C199-35VCT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 35ns 28-Pin SOJ T/R
CY7C199-35VI 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 35ns 28-Pin SOJ
CY7C199-35VIT 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 35ns 28-Pin SOJ T/R
CY7C199-45DMB 制造商:Cypress Semiconductor 功能描述:
CY7C199-45LMB 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 256K-Bit 32K x 8 45ns 28-Pin LCC