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| 型号： | D1213A-01WS |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS DIODE 3.3V 1CH UNI SOD323 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 3.3V |
| 电压 - 击穿： | 6V |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 其它名称： | D1213A-01WSDIDKR |
D1213A-01WS
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
I PP
V ESD_Contact
V ESD_Air
Value
5
±8
±15
Unit
A
kV
kV
Conditions
8/20 μ s, Per Figure 3
Standard IEC 61000-4-2
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
250
500
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Reverse working voltage
Reverse current (Note 6)
Reverse breakdown voltage
Forward voltage
Reverse clamping voltage, Positive Transients
Reverse clamping voltage, Negative Transients
Dynamic resistance
Capacitance
Symbol
V RWM
I R
V BR
V F
V CL1
V CL2
R DYN
C T
Min
—
—
6.0
0.6
—
—
—
—
Typ
—
0.1
—
0.8
10.0
-1.7
0.9
0.85
Max
3.3
1.0
—
0.95
—
—
—
1.2
Unit
V
μ A
V
V
V
V
?
pF
Test Conditions
—
V R = V RWM = 3.3V
I R = 1mA
I F = 8mA
I PP = 1A, t p = 8/20 μ s
I PP = -1A, t p = 8/20 μ s
I R = 1A, t p = 8/20 μ s
V R = 1.65V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
6. Short duration pulse test used to minimize self-heating effect.
7. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
300
275
250
225
200
175
150
125
100
75
50
25
Note 5
100
75
50
25
0
0
25
50
75
100
125
150
175
0
0
25
50
75 100 125
150
175 200
T A , AMBIENT TEMPERATURE ( ° C)
Figure 1 Power Derating Curve
T A , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
D1213A-01WS
Document number: DS35761 Rev. 3 - 2
2 of 4
November 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| D1213A-01WS-7 | 功能描述:TVS二极管阵列 1 Ch TVS Diode Array 3.3V 5.0A 250mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| D1213A-02S-7 | 功能描述:TVS二极管阵列 2 Ch TVS Diode Array 3.3V 6.0A 400mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| D1213A-02SM-7 | 功能描述:TVS二极管阵列 2 Ch TVS Diode Array 3.3V 6.0A 400mW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| D1213A-02SO-7 | 功能描述:TVS二极管阵列 2-Ch Low Cap TVS Diode ARRAY 0.85pF RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| D1213A-02SOL | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY |
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