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参数资料
| 型号： | D16805 |
| 厂商： | NEC Corp. |
| 英文描述： | MONOLITHIC H BRIDGE DRIVER CIRCUIT |
| 中文描述： | 单片电路H桥驱动电路 |
| 文件页数： | 5/12页 |
| 文件大小： | 85K |
| 代理商： | D16805 |
μ
P
5
A
Note
It is recommended to connect a capacitor of 1 to 10
μ
F between V
M
and GND to protect the gate of the
DMOS FET from surge voltage.
V
M
= 0.5 V to 7.5 V
V
DD
= 3.0 V to 6.0 V
C
1
= C
2
= C
3
= 10 = nF
C
1
C
2
C
3
V
DD
5
V
M
OUT1
OUT2
PGND
V
M
10
2
3
16
1
15
4
11
13
12
DGND
INC
STBY 14
8
6
7
IN1
IN2
9
M
OSC
circuit
Charge pump circuit
Control circuit
Level shift
circuit
D MOS FET
H bridge
circuit
Battery
CPU
Pull-down resistor
50 k
TYP.
Film
take-up motor
Forward
mode
Brake
mode
Reverse
mode
Stop mode
DC-DC
convertor
C
4
Note
1 to 10 F
H
H
L
L
IN
1
IN
2
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