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参数资料
| 型号： | D5V0L1B2T-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS DIODE 5V 1CH BI SOD523 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 功率（瓦特）： | 84W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 标准包装 |
| 其它名称： | D5V0L1B2T-7DIDKR |
D5V0L1B2T
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
P PP
I PP
V ESD_Contact
V ESD_Air
Value
84
6
±30
±30
Unit
W
A
kV
kV
Conditions
8/20 μ s, per Fig. 2
8/20 μ s, per Fig. 2
IEC 61000-4-2 Standard
IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
150
833
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 7)
Symbol
V RWM
I RM
Min
-
-
Typ
-
10
Max
5
100
Unit
V
nA
Test Conditions
-
V RWM = 5V
-
7.0
9.0
I PP = 1A, tp = 8/20 μ S
Clamping Voltage, Positive Transients
V CL
-
-
8.7
10.5
10.7
12.0
V
I PP = 3A, tp = 8/20 μ S
I PP = 5A, tp = 8/20 μ S
-
11.5
14.0
I PP = 6A, tp = 8/20 μ S
Breakdown Voltage
Differential Resistance
Channel Input Capacitance
V BR
R DIF
C IN
6
-
-
7
0.2
15
8
-
20
V
?
pF
I R = 1mA
I R = 1A, tp = 8/20 μ S
V R = 0V, f = 1MHz
Notes:
6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
7. Short duration pulse test used to minimize self-heating effect.
100
100
75
50
50
25
0
0
25
50
75 100 125
150
175 200
0
0
20
40
60
T A , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
t, TIME ( μ s)
Fig. 2 Pulse Waveform
D5V0L1B2T
Document number: DS35597 Rev. 5 - 2
2 of 4
June 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| D5V0L1B2WS-7 | TVS DIODE 5V 1CH BI SOD323 |
| D5V0L2B3SO-7 | TVS DIODE 5V 2CH BI SOT23 |
| D5V0L2B3T-7 | TVS DIODE 5V 2CH BI SOT523 |
| D5V0L2B3W-7 | TVS DIODE 5V 2CH BI SOT323 |
| D5V0L4B5S-7 | TVS DIODE 5V 4CH BI SOT353 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| D5V0L1B2TS7 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
| D5V0L1B2TS7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
| D5V0L1B2WS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
| D5V0L1B2WS-7 | 功能描述:TVS 二极管 - 瞬态电压抑制器 BI 10.1 to 20pF 1Ch 2 Pin SOD123 TVS RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| D5V0L1B5LP37 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:LOW CAPACITANCE BIDIRECTIONAL TVS DIODE |
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