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参数资料
| 型号： | DAN222G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 92K |
| 描述： | DIODE SWITCH DUAL CC 80V SC75-3 |
| 产品变化通告： | Copper Wire Change 29/Oct/2009 |
| 标准包装： | 3,000 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.2V @ 100mA |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 70V |
| 电流 - 平均整流 (Io)（每个二极管）： | 100mA（DC） |
| 电压 - (Vr)（最大）： | 80V |
| 反向恢复时间(trr)： | 4ns |
| 二极管类型： | 标准 |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-75，SOT-416 |
| 供应商设备封装： | SC-75，SOT-416 |
| 包装： | 带卷 (TR) |
| 其它名称： | DAN222GOS DAN222GOS-ND DAN222GOSTR |
?
Semiconductor Components Industries, LLC, 2013
September, 2013 ?
Rev. 7
1
Publication Order Number:
DAN222/D
DAN222, NSVDAN222
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SOT?416/SC?75 package which is designed
for low power surface mount applications, where board space is at a
premium.
Features
?
Fast trr
?
Low CD
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA
= 25
°C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
80
Vdc
Peak Reverse Voltage
VRM
80
Vdc
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
300
mAdc
Peak Forward Surge Current (Note 1)
IFSM
2.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
°C/W
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 S
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
SC?75/SOT?416
CASE 463
STYLE 3
CATHODE
3
12
ANODE
1
DAN222T1G 3000 / Tape & ReelSC?75
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
N9 M
N9 = Specific Device Code
M = Date Code*
= Pb?Free Package
1
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DAN222G SC?75
(Pb?Free)
3000 / Tape & Reel
(Pb?Free)
NSVDAN222T1G 3000 / Tape & ReelSC?75
(Pb?Free)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DAN222M | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:Ultra high speed switching |
| DAN222M_11 | 制造商:ROHM 制造商全称:Rohm 功能描述:Switching Diode |
| DAN222MT2L | 功能描述:二极管 - 通用，功率，开关 SWITCH 100MA 80V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| DAN222MT2L(G) | 制造商:ROHM Semiconductor 功能描述: |
| DAN222T1 | 功能描述:二极管 - 通用，功率，开关 80V 100mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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