| 型号 | 厂商 | 描述 |
| ml4621-36 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
| ml4623p-255 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
| ml4624p-120 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
| ml4627p-103 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
| ml4628p-36 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
| ml4629-255 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
| ml4629-43 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
| ml4641-186 2 3 4 5 6 |
300 V, SILICON, PIN DIODE | |
| ml4642-32 2 3 4 5 6 |
300 V, SILICON, PIN DIODE | |
| ml4667-116 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
| md1.5k18 2 |
GENERAL SEMICONDUCTOR INC | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| md1.5k51 2 |
GENERAL SEMICONDUCTOR INC | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| md1.5k56c 2 |
GENERAL SEMICONDUCTOR INC | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| md1.5k82c 2 |
GENERAL SEMICONDUCTOR INC | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| mc1.5k56c 2 |
GENERAL SEMICONDUCTOR INC | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| mdsa14c 2 |
GENERAL SEMICONDUCTOR INC | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| mdsa8.0c 2 |
GENERAL SEMICONDUCTOR INC | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| mdsa85 2 |
GENERAL SEMICONDUCTOR INC | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| mdp6k20 2 |
GENERAL SEMICONDUCTOR INC | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| mdp6k33c 2 |
GENERAL SEMICONDUCTOR INC | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| mdp6k6.8 2 |
GENERAL SEMICONDUCTOR INC | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| mdp6k8.2c 2 |
GENERAL SEMICONDUCTOR INC | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| ml4311-276 2 3 4 5 6 |
25 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4315-118 2 3 4 5 6 |
25 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4317-31 2 3 4 5 6 |
25 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4334-33 2 3 4 5 6 |
40 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4336-186 2 3 4 5 6 |
40 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4360-186 2 3 4 5 6 |
60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4363-31 2 3 4 5 6 |
60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4405-32 2 3 4 5 6 |
SILICON, STEP RECOVERY DIODE | |
| ml4539-30 2 3 4 5 6 |
KA BAND, 4.5 pF, 45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4540-33 2 3 4 5 6 |
45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4540-94 2 3 4 5 6 |
45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4559-120 2 3 4 5 6 |
60 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4574-118 2 3 4 5 6 |
25 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4574-30 2 3 4 5 6 |
25 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| ml4575-97 2 3 4 5 6 |
25 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
| ml48710b-138 2 3 4 5 6 |
GALLIUM ARSENIDE, STEP RECOVERY DIODE | |
| mbr3060pt 2 3 |
LITE-ON SEMICONDUCTOR CORP | 30 A, 60 V, SILICON, RECTIFIER DIODE |
| mbr1080ct 2 3 |
LITE-ON SEMICONDUCTOR CORP | 10 A, 80 V, SILICON, RECTIFIER DIODE, TO-220AB |
| m19500/469-01x |
SENSITRON SEMICONDUCTOR | 10 A, SILICON, BRIDGE RECTIFIER DIODE |
| mp02g130-18 2 3 4 5 6 7 8 |
130 A, 1800 V, SILICON, RECTIFIER DIODE | |
| mp02hb130-22 2 3 4 5 6 7 8 |
130 A, 2200 V, SILICON, RECTIFIER DIODE | |
| mf34-1200r 2 3 4 5 6 |
40 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5 | |
| ma2913 2 3 |
NICHICON CORP | 0.1 A, 8 ELEMENT, SILICON, SIGNAL DIODE |
| mpte-8ct 2 |
1500 W, BIDIRECTIONAL, SILICON, TVS DIODE | |
| mmbz5244b 2 |
14 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE | |
| mmbz5253 2 |
25 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE | |
| mmsz5226b 2 |
3.3 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE | |
| mmsz5237b 2 |
8.2 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |