| 型号 | 厂商 | 描述 |
| m29w641du12za1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641dh12za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641dl12za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:37; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641du12za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:37; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641dh12za6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:50; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641dl12za6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:50; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641du12za6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Shielded Multiconductor Cable; Number of Conductors:50; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes |
| m29w641dh12za6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Unshielded Multiconductor Cable; Number of Conductors:4; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:60 C; Voltage Nom.:300V RoHS Compliant: Yes |
| m29w641dl12za6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Multiconductor Cable; Number of Conductors:5; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Conductor Plating:Tin; Jacket Color:Chrome RoHS Compliant: Yes |
| m29w641du12za6f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Multiconductor Cable; Number of Conductors:5; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Conductor Material:Copper; Conductor Plating:Tin; Jacket Color:Chrome RoHS Compliant: Yes |
| m29w641dh12za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Multiconductor Cable; Number of Conductors:9; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:No; Conductor Material:Copper; Jacket Color:Chrome RoHS Compliant: Yes |
| m29w641du10n1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| m29w641du10n1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| m29w641du10n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| m29w641du10n6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| m29w641dh90za1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| m29w641dl90za1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| m29w800ab120m1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab90n5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 |
| m29w800ab90n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab90za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 |
| m29w800ab90za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 |
| m29w800at 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800at100m1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SC70 -40 to 85 |
| m29w800at100m5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SC70 -40 to 85 |
| m29w800at100m6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SC70 -40 to 85 |
| m29w800at100n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SC70 -40 to 85 |
| m29w800at100n5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | Low-Power Single Schmitt-Trigger Buffer 5-SC70 -40 to 85 |
| m29w800at120za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800at120za5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | RESISTOR: 100 OHM, 1/10W, 1%, PACKAGE 0805 |
| m29w800ab120za5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab100m1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab100m5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab100m6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab100n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120m5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120m6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80m6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80n1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80n5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80m5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab80m1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120za1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |
| m29w800ab120n5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半导体 | 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory |