| 型号 | 厂商 | 描述 |
| iwd512 2 3 |
IWD SERIES - DUAL OUTPUT, 10 WATT | |
| iwd515 2 3 |
IWD SERIES - DUAL OUTPUT, 10 WATT | |
| iwd 2 3 |
IWD SERIES - DUAL OUTPUT, 10 WATT | |
| iws1205 2 3 |
IWS SERIES - 10 WATT | |
| iws1212 2 3 |
IWS SERIES - 10 WATT | |
| iws1215 2 3 |
IWS SERIES - 10 WATT | |
| iws1224 2 3 |
RESISTOR 200 OHM .5W CARB COMP | |
| iws1248 2 3 |
IWS SERIES - 10 WATT | |
| iws2424 2 3 |
IWS SERIES - 10 WATT | |
| iws2448 2 3 |
IWS SERIES - 10 WATT | |
| iws4824 2 3 |
IWS SERIES - 10 WATT | |
| iws4848 2 3 |
IWS SERIES - 10 WATT | |
| iws505 2 3 |
IWS SERIES - 10 WATT | |
| iws512 2 3 |
IWS SERIES - 10 WATT | |
| iws515 2 3 |
IWS SERIES - 10 WATT | |
| iws524 2 3 |
IWS SERIES - 10 WATT | |
| iws548 2 3 |
IWS SERIES - 10 WATT | |
| ixbd4411pc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
| ixbd4412pc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
| ixbd4412pi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
| ixbd4413pc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
| ixbd4413pi 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 |
Interface IC | |
| ixfr21n100q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 19A I(D) | TO-247VAR | |
| ixfr24n100 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 22A I(D) | TO-247VAR | |
| ixfr21n100q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电压1000V,导通电阻0.50Ω的N沟道增强型HiPerFET功率MOSFET) |
| ixfr50n50 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 43A I(D) | TO-247VAR | |
| ixfr55n50 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-247VAR | |
| ixfr58n20q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 50A I(D) | TO-247VAR | |
| ixfr80n20q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 71A I(D) | TO-247VAR | |
| ixfr80n20q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电压200V,导通电阻28mΩ的N沟道增强型HiPerFET功率MOSFET) |
| ixft12n100q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 12A I(D) | TO-268 | |
| ixft12n90q 2 3 4 |
30V N-Channel PowerTrench MOSFET | |
| ixft14n100 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 14A I(D) | TO-268 | |
| ixft15n100 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 15A I(D) | TO-268 | |
| ixfh12n100q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 12A I(D) | TO-247AD | |
| ixfh12n90q 2 3 4 |
30V N-Channel PowerTrench MOSFET | |
| ixfh15n100 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 15A I(D) | TO-247AD | |
| ixft20n60q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-268 | |
| ixfh20n60q 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247AD | |
| ixfh20n60q 2 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电压600V,导通电阻0.35Ω的N沟道增强型HiPerFET功率MOSFET) |
| ixft21n50f 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-268 | |
| ixfh21n50f 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | TO-247AD | |
| ixfh24n50s 2 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247SMD | |
| ixft32n50q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-268 | |
| ixfh30n50s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 30A I(D) | TO-247VAR | |
| ixfh32n50q 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247AD | |
| ixfh32n50s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 32A I(D) | TO-247VAR | |
| ixfh35n30s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | TO-247VAR | |
| ixfh40n30s 2 3 4 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 40A I(D) | TO-264AA | |
| ixfh30n50q 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电压500V,导通电阻0.16Ω的N沟道增强型HiPerFET功率MOSFET) |