| 型号 | 厂商 | 描述 |
| bat721series 2 3 4 5 6 7 8 |
NXP Semiconductors N.V. | 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture |
| bby52-05w 2 3 |
TAXI™-compatible HOTLink® Transceiver | |
| bby55-05w 2 3 |
?Silicon high Q hyperabrupt tuning diode? | |
| bc317b |
MAX 7000 CPLD 64 MC 100-TQFP | |
| bc317 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR | |
| bc351 |
PNP SILICON TRANSISTOR | |
| bc368 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | NPN medium power transistor |
| bc368 2 3 4 5 6 7 8 |
COMPLEMENTARY SILICON EPITAXIAL TRANSISTOR | |
| bc368-10 2 3 4 5 6 7 8 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92 | |
| bc368-16 2 3 4 5 6 7 8 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92 | |
| bc368-25 2 3 4 5 6 7 8 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92 | |
| bc859w 2 3 4 5 6 7 8 |
NXP SEMICONDUCTORS | High Speed CMOS Logic Quad Bilateral Switches 14-PDIP -55 to 125 |
| bc859w 2 3 4 5 6 7 8 |
DIOTEC SEMICONDUCTOR AG | High Speed CMOS Logic Quad Bilateral Switches 14-SOIC -55 to 125 |
| bcb-100 |
FUSE 10 AMP 326010/MDA10CERAMIC LF BUSS | |
| bcb2y-150 |
FUSE,SLO-BLO,15A,250V | |
| bcb2y-400 |
Fuse Holder; Fuse Size/Group:1/4 x 1-1/4 "; Body Material:Thermoplastic; Leaded Process Compatible:Yes; Mounting Type:Panel Mount RoHS Compliant: Yes | |
| bcb2y-600 |
Fuse Holder; Fuse Size/Group:1/4 x 1-1/4 "; Mounting Type:Panel Mount; Leaded Process Compatible:Yes | |
| bcb2y-800 |
HOLDER,FUSE,1/4IN X 1-1/4IN FUSES | |
| bcb-400 |
Fuse holder, 3AG fuse, snap mount termination, blown fuse RoHS Compliant: No | |
| bcb-600 |
Fuse Holder; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No | |
| bcp5510 |
Obsolete - alternative part: BCP5616 | |
| bcp5516 |
Obsolete - alternative part: BCP5616 | |
| bcp55 |
意法半导体 | MEDIUM POWER AMPLIFIER |
| bcp55 |
DIOTEC SEMICONDUCTOR AG | Surface mount Si-Epitaxial PlanarTransistors |
| bcp6825 |
Cartridge Fuse; Current Rating:2A; Voltage Rating:250V; Fuse Type:Time Delay; Fuse Size/Group:5 x 20 mm; Body Material:Glass; Diameter:5mm; Fuse Terminals:Ferrule; Length:20mm; Series:219XA | |
| bcp68t3 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-223 | |
| bcp68 |
ZETEX PLC | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| bcp68-25 |
ZETEX PLC | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| bcw33lt3 2 3 4 5 6 7 8 |
FUSE BLOCK 5X20MM .110 QC TERM | |
| bcw33r 2 3 4 5 6 7 8 |
FUSE BLOCK 5X20MM SOLDER TERM | |
| bcw33 2 3 4 5 6 7 8 |
SAMSUNG SEMICONDUCTOR CO. LTD. | NPN EPITAXIAL SILICON TRANSISTOR |
| bcw33 2 3 4 5 6 7 8 |
DIOTEC SEMICONDUCTOR AG | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
| bcw33lt1 2 3 4 5 6 7 8 |
乐山无线电股份有限公司 | General Purpose Transistors(NPN Silicon) |
| bcw34xdcsm |
PTC RESETTABLE 9V .200A SMD 0805 | |
| bd45xxxgseries 2 3 4 |
Voltage detectors | |
| bd46xxxgseries 2 3 4 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:10mA; Package/Case:3-TO-92; Current, It av:0.8A; Holding Current:15mA | |
| bd47xxgseries 2 3 4 |
リセットIC | |
| bd4f5fsls33 2 3 4 5 6 7 8 9 10 11 12 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA | |
| bd4puf5fsls33 2 3 4 5 6 7 8 9 10 11 12 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA | |
| bd4puodf5fscls33 2 3 4 5 6 7 8 9 10 11 12 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA | |
| bd4puodf5fsls33 2 3 4 5 6 7 8 9 10 11 12 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:6A; Gate Trigger Current Max, Igt:35mA | |
| bds17smd05 |
DIODE TVS 14V 1500W UNI 5% SMC | |
| bds17smd |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bds17 |
SEMELAB LTD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES |
| bdt62a-sm 2 3 4 5 6 7 8 |
DIODE TVS 60V 1500W UNI 5% SMC | |
| bdt62c-sm 2 3 4 5 6 7 8 |
DIODE TVS 60V 1500W BIDIR 5% SMC | |
| bdt63a-sm 2 3 4 5 6 7 8 9 |
TRANSISTOR DARLINGTON | |
| bdt63c-sm 2 3 4 5 6 7 8 9 |
DIODE TVS 6.5V 1500W UNI 5% SMC | |
| bdt64a-sm 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
DIODE TVS 7.0V 1500W UNI 5% SMC | |
| bdt64c-sm 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
DIODE TVS 70V 1500W UNI 5% SMC |