| 型号 | 厂商 | 描述 |
| hn1c01fy 2 3 4 |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| hn1c03fa 2 3 4 |
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| hn1c03fb 2 3 4 |
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| hn1c03fua 2 3 4 |
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| hn1c03fub 2 3 4 |
TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| hn1c01fu 2 |
Toshiba Corporation | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| hn1c01f 2 |
Toshiba Corporation | NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| hn1c03fu 2 3 4 |
Toshiba Corporation | NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) |
| hn1c03f 2 3 4 |
Toshiba Corporation | NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHING APPLICATIONS) |
| hn1d01fe 2 3 4 |
Toshiba Corporation | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| hn1d01fu 2 |
Toshiba Corporation | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| hn1d01f 2 |
Toshiba Corporation | DIODE (ULTRAL HIGH SPEED SWITCHING APPLICATIONS) |
| hn1d02fe 2 3 4 |
Toshiba Corporation | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| hn1d02fu 2 |
Toshiba Corporation | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| hn1d02f 2 |
Toshiba Corporation | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| hn1d03fu 2 3 4 |
Toshiba Corporation | Ultra High Speed Switching Diode(超高速开关二极管) |
| hn1d03f 2 3 |
Toshiba Corporation | Ultra High Speed Switching Diode(超高速开关二极管) |
| hn1d04fu 2 3 4 |
Toshiba Corporation | Ultra High Speed Switching Application |
| hn1j02fu 2 3 4 |
Toshiba Corporation | P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| hn1k02fu 2 3 4 |
Toshiba Corporation | N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| hn1k03fu 2 3 4 |
Toshiba Corporation | N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| hn1k04fu 2 3 4 5 |
Toshiba Corporation | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| hn1k05fu 2 3 4 5 |
Toshiba Corporation | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| hn1k06fu 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| hn1l02fu 2 3 4 5 6 |
Toshiba Corporation | N CHANNEL MOS TYPE, P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| hn1l03fu 2 3 4 5 6 |
Toshiba Corporation | N,P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS) |
| hn1v01ha |
COMMON CATHODE DIODE ARRAY|SO | |
| hn1v01hb |
COMMON CATHODE DIODE ARRAY|SO | |
| hn1v02ha |
ARRAY OF INDEPENDENT DIODES|SO | |
| hn1v02hb |
ARRAY OF INDEPENDENT DIODES|SO | |
| hn1v01h |
Toshiba Corporation | EPITAXIAL PLANAR TYPE (AM RADIO BAND TUNING APPLICATIONS) |
| hn1v02h |
Toshiba Corporation | EPITAXIAL PLANAR TYPE (AM RADIO BAND TUNING APPLICATIONS) |
| hn25084 |
x4 PROM | |
| hn25084s |
x4 PROM | |
| hn25085 |
x4 PROM | |
| hn25085s |
x4 PROM | |
| hn25088 |
x8 PROM | |
| hn25088l |
x8 PROM | |
| hn25088s |
Waterproof small connector with shielding; HRS No: 136-1118-4 00; Contact Mating Area Plating: Gold | |
| hn25089 |
Waterproof small connector with shielding; HRS No: 136-3002-0 03 | |
| hn25089l |
x8 PROM | |
| hn25089s |
x8 PROM | |
| hn27c1024hcp-85 2 3 4 5 6 7 8 9 10 11 12 |
x16 EPROM | |
| hn27c256hseries 2 3 4 5 6 7 8 9 10 11 12 |
x8 EPROM | |
| hn27c301ag-10 2 3 4 5 6 7 8 9 10 11 12 |
x8 EPROM | |
| hn27c301ag-12 2 3 4 5 6 7 8 9 10 11 12 |
Board-to-wire, High voltage connector; HRS No: 547-2022-9 00; No. of Positions: 2; Contact Spacing (mm): 12; Terminal Pitch (mm): 12 | |
| hn27c301ag-15 2 3 4 5 6 7 8 9 10 11 12 |
x8 EPROM | |
| hn27c301ag-20 2 3 4 5 6 7 8 9 10 11 12 |
x8 EPROM | |
| hn27c301ap-12 2 3 4 5 6 7 8 9 10 11 12 |
x8 EPROM | |
| hn27c301ap-15 2 3 4 5 6 7 8 9 10 11 12 |
x8 EPROM |