| 型号 | 厂商 | 描述 |
| k4n26323ae-gc20 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit GDDR2 SDRAM |
| k4n26323ae-gc22 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit GDDR2 SDRAM |
| k4n26323ae-gc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit GDDR2 SDRAM |
| k4n56163qf 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit gDDR2 SDRAM |
| k4n56163qf-gc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit gDDR2 SDRAM |
| k4n56163qf-gc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit gDDR2 SDRAM |
| k4n56163qf-gc30 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit gDDR2 SDRAM |
| k4n56163qf-gc37 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256Mbit gDDR2 SDRAM |
| k4pe68a 2 3 4 |
Taiwan Semiconductor Co., Ltd. | Transient Voltage Suppressor Diodes |
| k4r271669a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r271669a-n(m)ck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r441869a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r441869a-n(m)cg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r441869a-n(m)ck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r441869a-n(m)ck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r271669a-n(m)ck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r271669a-nb(m)ccg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r271669b-ncg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-mcg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-mck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-mck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-nck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-nck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-mcg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-mck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-mck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-ncg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-nck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-nck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit RDRAM(D-die) |
| k4r271669d-t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit RDRAM(D-die) |
| k4r271669d-tcs8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit RDRAM(D-die) |
| k4r271669f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit RDRAM(F-die) |
| k4s160822d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
| k4s161622d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512K x 16Bit x 2 Banks Synchronous DRAM |
| k4s161622e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 SDRAM |
| k4s161622e-tc10 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 SDRAM |
| k4s161622e-tc55 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 SDRAM |
| k4s161622e-tc60 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 SDRAM |
| k4s161622e-tc70 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 SDRAM |
| k4s161622e-tc80 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1M x 16 SDRAM |
| k4s161622h 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mb H-die SDRAM Specification |
| k4s161622h-tc55 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mb H-die SDRAM Specification |
| k4s161622h-tc60 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mb H-die SDRAM Specification |
| k4s161622h-tc70 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mb H-die SDRAM Specification |
| k4s161622h-tc80 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 16Mb H-die SDRAM Specification |
| k4s1g0732b 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | SDRAM stacked 1Gb B-die |
| k4s1g0732b-tc75 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | SDRAM stacked 1Gb B-die |
| k4s280432b 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| k4s280432d 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |