| 型号 | 厂商 | 描述 |
| jan1n5341a 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341atr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341b 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341btr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341c 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341ctr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341d 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341dtr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5341tr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5342 2 3 |
Microsemi Corporation | Octal D-type transparent latch; 3-state - Description: Octal D-Type Transparent Latch (3-State) ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: Low ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 15 ns; Voltage: 5 Volts + |
| jan1n5342a 2 3 |
Microsemi Corporation | Octal D-type flip-flop; positive edge-trigger; 3-state - Description: Octal D-Type Flip-Flop ; F<sub>max</sub>: 133 MHz; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 14@5V ns; Voltage: 2.0-6.0 V |
| jan1n5342atr 2 3 |
Microsemi Corporation | Octal D-type flip-flop; positive edge-trigger; 3-state - Description: Octal D-Type Flip-Flop ; F<sub>max</sub>: 133 MHz; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 14@5V ns; Voltage: 2.0-6.0 V |
| jan1n5342b 2 3 |
Microsemi Corporation | Octal D-type flip-flop; positive edge-trigger; 3-state - Description: Octal D-Type Flip-Flop ; F<sub>max</sub>: 133 MHz; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 7.8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 14@5V ns; Voltage: 2.0-6.0 V |
| jan1n5344tr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345a 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345atr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345b 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345btr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345c 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345ctr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5345d 2 3 |
Microsemi Corporation | 8-bit magnitude comparator - Description: 8-Bit Magnitude Comparator ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 16@5V ns; Voltage: 2.0-6.0 V |
| jan1n5345dtr 2 3 |
Microsemi Corporation | 8-bit magnitude comparator - Description: 8-Bit Magnitude Comparator ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 16@5V ns; Voltage: 2.0-6.0 V |
| jan1n5345tr 2 3 |
Microsemi Corporation | 8-bit magnitude comparator - Description: 8-Bit Magnitude Comparator ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 16@5V ns; Voltage: 2.0-6.0 V |
| jan1n5346 2 3 |
Microsemi Corporation | 8-bit magnitude comparator - Description: 8-Bit Magnitude Comparator ; Logic switching levels: CMOS ; Number of pins: 20 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 16@5V ns; Voltage: 2.0-6.0 V |
| jan1n5346a 2 3 |
Microsemi Corporation | Hex non-inverting precision Schmitt-trigger - Description: Hex Precision Schmitt-Trigger; Non-Inverting ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 27@6V ns; Voltage: 2.0-6.0 V |
| jan1n5346atr 2 3 |
Microsemi Corporation | Hex non-inverting precision Schmitt-trigger - Description: Hex Precision Schmitt-Trigger; Non-Inverting ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 27@6V ns; Voltage: 2.0-6.0 V |
| jan1n5346b 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5346btr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5346c 2 3 |
Microsemi Corporation | Phase-locked-loop with lock detector - Description: Phase-Locked-Loop with Lock Detector ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Speed: 19 MHz Center Freq ; Voltage: 5 Volts + |
| jan1n5346ctr 2 3 |
Microsemi Corporation | Phase-locked-loop with lock detector - Description: Phase-Locked-Loop with Lock Detector ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Speed: 19 MHz Center Freq ; Voltage: 5 Volts + |
| jan1n5346d 2 3 |
Microsemi Corporation | Phase-locked-loop with lock detector - Description: Phase-Locked-Loop with Lock Detector ; Logic switching levels: CMOS ; Number of pins: 16 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Speed: 19 MHz Center Freq ; Voltage: 5 Volts + |
| jan1n5346dtr 2 3 |
Microsemi Corporation | Quad 2-input EXCLUSIVE-NOR gate - Description: Quad 2-Input EXCLUSIVE-NOR Gate ; Logic switching levels: CMOS ; Number of pins: 14 ; Output drive capability: +/- 5.2 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 11@5V ns; Voltage: 2.0-6.0 V |
| jan1n5346tr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5347 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5347a 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5347atr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5347b 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5347btr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5352ctr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5355dtr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5355tr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356a 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356atr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356b 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356btr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356c 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356ctr 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |
| jan1n5356d 2 3 |
Microsemi Corporation | surface mount silicon Zener diodes |