| 型号 | 厂商 | 描述 |
| jantx1n4153 2 |
0.15 A, SILICON, SIGNAL DIODE, DO-35 | |
| jan1n4534 2 |
0.15 A, SILICON, SIGNAL DIODE, DO-34 | |
| jantxv1n4153 2 |
0.15 A, SILICON, SIGNAL DIODE, DO-35 | |
| jan1n4454ur 2 |
MICROSEMI CORP-LAWRENCE | 0.2 A, SILICON, SIGNAL DIODE, DO-213AA |
| jan1n4454ur 2 |
MICROSEMI CORP | 0.2 A, SILICON, SIGNAL DIODE, DO-213AA |
| jantx1n4454ur 2 |
MICROSEMI CORP | 0.2 A, SILICON, SIGNAL DIODE, DO-213AA |
| jantxv1n4454ur 2 |
MICROSEMI CORP | 0.2 A, SILICON, SIGNAL DIODE, DO-213AA |
| jantxv1n4454ur 2 |
MICROSEMI CORP-LAWRENCE | 0.2 A, SILICON, SIGNAL DIODE, DO-213AA |
| jan1n4500-1 |
MICROSEMI CORP | 0.3 A, SILICON, SIGNAL DIODE |
| jan1n4938-1 |
0.1 A, 200 V, SILICON, SIGNAL DIODE, DO-35 | |
| jan1n5195x 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| 1n4156 2 3 |
SILICON, STABISTOR DIODE | |
| 1n4830 2 3 |
SILICON, STABISTOR DIODE | |
| jan1n4150r 2 3 |
MICROSEMI CORP | 0.2 A, 75 V, SILICON, SIGNAL DIODE |
| jan1n4938r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| jantxv1n4938 2 3 |
0.2 A, 200 V, SILICON, SIGNAL DIODE | |
| jantx1n914r 2 3 |
MICROSEMI CORP | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| jantxv1n6643r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.3 A, 75 V, SILICON, SIGNAL DIODE |
| jantx1n6638r 2 3 |
0.3 A, 150 V, SILICON, SIGNAL DIODE | |
| jantx1n4153-1 2 3 |
0.1 A, 75 V, SILICON, SIGNAL DIODE | |
| jan1n4153r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| jan1n3595x 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 150 V, SILICON, SIGNAL DIODE |
| jantxv1n3595 2 3 |
0.2 A, 150 V, SILICON, SIGNAL DIODE | |
| jantx1n5194 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, SILICON, SIGNAL DIODE |
| jan1n5196 2 3 |
0.05 A, 250 V, SILICON, SIGNAL DIODE | |
| jan1n4148-1x 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| jan1n4150-1x 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 75 V, SILICON, SIGNAL DIODE |
| jantxv1n6638r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.3 A, 150 V, SILICON, SIGNAL DIODE |
| jantxv1n4153r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| jantx1n3595r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 150 V, SILICON, SIGNAL DIODE |
| jan1n4150x 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 75 V, SILICON, SIGNAL DIODE |
| jantxv1n5196 2 3 |
0.05 A, 250 V, SILICON, SIGNAL DIODE | |
| jantxv1n4454-1 2 3 |
0.1 A, 75 V, SILICON, SIGNAL DIODE | |
| jantx1n5194r 2 3 |
0.2 A, 80 V, SILICON, SIGNAL DIODE | |
| jan1n5196x 2 3 |
MICROSEMI CORP-LAWRENCE | 0.05 A, 250 V, SILICON, SIGNAL DIODE |
| jan1n5196r 2 3 |
0.05 A, 250 V, SILICON, SIGNAL DIODE | |
| jan1n914x 2 3 |
MICROSEMI CORP | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| jantx1n4454r 2 3 |
MICROSEMI CORP | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| jantxv1n4938 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| jantxv1n5194 2 3 |
MICROSEMI CORP-LAWRENCE | 0.2 A, SILICON, SIGNAL DIODE |
| jan1n914x 2 3 |
0.2 A, 100 V, SILICON, SIGNAL DIODE | |
| jan1n4153-1x 2 3 |
MICROSEMI CORP | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| jantx1n6642r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.3 A, 100 V, SILICON, SIGNAL DIODE |
| jan1n5196r 2 3 |
MICROSEMI CORP-LAWRENCE | 0.05 A, 250 V, SILICON, SIGNAL DIODE |
| jantxv1n4454r 2 3 |
0.1 A, 75 V, SILICON, SIGNAL DIODE | |
| jantx1n4454 2 3 |
0.1 A, 75 V, SILICON, SIGNAL DIODE | |
| jantx1n5195 2 3 |
0.2 A, 200 V, SILICON, SIGNAL DIODE | |
| jantx1n3595-1x 2 3 |
MICROSEMI CORP | 0.2 A, 150 V, SILICON, SIGNAL DIODE |
| jantx1n5195r 2 3 |
MICROSEMI CORP | 0.2 A, 200 V, SILICON, SIGNAL DIODE |
| jan1n4938r 2 3 |
0.2 A, 200 V, SILICON, SIGNAL DIODE |