型号 | 厂商 | 描述 |
ml4961-118 2 3 4 5 6 |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE | |
ml4204-186 2 3 4 5 6 |
15 V, SILICON, PIN DIODE | |
ml4209-276 2 3 4 5 6 |
50 V, SILICON, PIN DIODE | |
ml4609-34 2 3 4 5 6 |
15 V, SILICON, PIN DIODE | |
ml4611p-31 2 3 4 5 6 |
40 V, SILICON, PIN DIODE | |
ml4611p-96 2 3 4 5 6 |
40 V, SILICON, PIN DIODE | |
ml4614-30 2 3 4 5 6 |
70 V, SILICON, PIN DIODE | |
ml4616-275 2 3 4 5 6 |
70 V, SILICON, PIN DIODE | |
ml4617p-96 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
ml4619p-120 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
ml4620-275 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
ml4620-30 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
ml4621-275 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
ml4621-97 2 3 4 5 6 |
100 V, SILICON, PIN DIODE | |
ml4622-128 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
ml4622p-118 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
ml4623p-275 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
ml4623p-43 2 3 4 5 6 |
150 V, SILICON, PIN DIODE | |
ml4628p-103 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
ml4630-120 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
ml4630-148 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
ml4631-120 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
ml4640-91 2 3 4 5 6 |
300 V, SILICON, PIN DIODE | |
ml4642-30 2 3 4 5 6 |
300 V, SILICON, PIN DIODE | |
ml4642-91 2 3 4 5 6 |
300 V, SILICON, PIN DIODE | |
ml4645-91 2 3 4 5 6 |
400 V, SILICON, PIN DIODE | |
ml4650-31 2 3 4 5 6 |
500 V, SILICON, PIN DIODE | |
ml4669p-144 2 3 4 5 6 |
200 V, SILICON, PIN DIODE | |
mdsa13c 2 |
GENERAL SEMICONDUCTOR INC | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
mdsa40c 2 |
GENERAL SEMICONDUCTOR INC | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
mdsa40 2 |
GENERAL SEMICONDUCTOR INC | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
mdsa64c 2 |
GENERAL SEMICONDUCTOR INC | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
mcsa64c 2 |
GENERAL SEMICONDUCTOR INC | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
ml4331-103 2 3 4 5 6 |
40 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4335-103 2 3 4 5 6 |
40 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4335-97 2 3 4 5 6 |
40 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4353-97 2 3 4 5 6 |
60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4364-103 2 3 4 5 6 |
60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4365-103 2 3 4 5 6 |
60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4512-120 2 3 4 5 6 |
30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4515-30 2 3 4 5 6 |
KA BAND, 1.75 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4517-276 2 3 4 5 6 |
30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4519-96 2 3 4 5 6 |
30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4535-95 2 3 4 5 6 |
45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4538-31 2 3 4 5 6 |
45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4558-30 2 3 4 5 6 |
KA BAND, 3.5 pF, 60 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE | |
ml4577-186 2 3 4 5 6 |
25 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
ml4579-33 2 3 4 5 6 |
25 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE | |
ml48701e-30 2 3 4 5 6 |
MILLIMETER WAVE BAND, GALLIUM ARSENIDE, STEP RECOVERY DIODE | |
ml48701e-96 2 3 4 5 6 |
GALLIUM ARSENIDE, STEP RECOVERY DIODE |