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参数资料
| 型号： | DB153S-T |
| 厂商： | RECTRON LTD |
| 元件分类： | 桥式整流 |
| 中文描述： | 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 31K |
| 代理商： | DB153S-T |
SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1200 Volts CURRENT 1.5 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Surge overload rating - 40 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DB151S
THRU
DB1512S
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
SILICON BRIDGE RECTIFIER
Dimensions in inches and (millimeters)
DB-S
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL
VRRM
VDC
IO
IFSM
VRMS
Volts
Amps
1.5
40
UNITS
Maximum Average Forward Output Current at TA = 40
oC
Volts
Amps
MECHANICAL DATA
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
NOTE: 1. Suffix “-s” Surface Mount for Dip Bridge.
2005-4
REV:A
DC Blocking Voltage per element
CHARACTERISTICS
VF
SYMBOL
IR
UNITS
1.1
0.5
mAmps
uAmps
Element at 1.5A DC
Maximum Forward Voltage Drop per Bridge
Volts
@TA = 25
o C
@TA = 125
oC
5.0
Maximum Reverse Current at rated
DB151S
DB153S
DB154S
DB152S
DB155S DB156S DB157S
Operating and Storage Temperature Range
-55 to + 150
Typical thermal resistance
TJ,TSTG
40
0 C/ W
0 C
R
θ JA
R
θ JC
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
DB151S
DB153S DB154S
DB152S
DB155S DB156S DB157S
50
200
400
100
600
800
1000
1200
840
DB1512S
1200
DB1512S
.255 (6.5)
.310 (7.9)
.290 (7.4)
.245 (6.2)
.042 (1.1)
.038 (1.0)
.013 (.330)
.009
.003 (.076)
.410 (10.4)
.060 (1.524)
.040 (1.016)
.360 (9.4)
(0.229)
.346 (8.8)
.307 (7.8)
.195 (5.0)
.205 (5.2)
.135 (3.4)
.115 (2.9)
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DB154 | 功能描述:桥式整流器 DIP,Bridge,GP DB-1,1.5A,400V RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| DB154-BP | 制造商:Micro Commercial Components (MCC) 功能描述:1.5 AMP SINGLE PHASE BRIDGE RECTIFIER 50 TO 1000 VOLTS |
| DB154C | 功能描述:桥式整流器 1.5A 400V GP RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| DB154G | 功能描述:桥式整流器 SI BRIDGE RECT DB-PK 50-1KV 1.5A400P/280R RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| DB154LS | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes |
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