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参数资料
| 型号： | DB3 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | DIAC TRIGGER DIODE 150MW DO-35 |
| 标准包装： | 1 |
| 电流 - 峰值输出： | 2A |
| 电压 - 击穿： | 28 ~ 36V |
| 电流 - 击穿： | 100µA |
| 封装/外壳： | DO-204AH，DO-35，轴向 |
| 供应商设备封装： | DO-35 |
| 包装： | 剪切带 (CT) |
| 其它名称： | DB3CT |
September 2010
DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
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V BO : 32V Version
Low break-over current
DO-35 package (JEDEC)
Hermetically sealed glass
Compression bonded construction
All external surfaces are corrosion resistant and
terminals are readily solderable
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RoHS compliant
High reliability glass passivation insuring parameter stability and
protection against junction contamination.
Terminal: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed : 260 ° C/10 seconds
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings and Electrical Characteristics
Symbol
Parameter
DB3
Value
DB3TG
Units
V BO
±V BO
I BO
Δ V
Break-over Voltage
Break-over Voltage Symmetry
Break-over Current
Dynamic Break-over Voltage
@ C=22nF Min.
Typ.
Max.
@ C=22nF Max.
@ C=22nF Max.
@ I BO to I F =10mA Min.
28
32
36
±3
100
5
30
32
34
±2
15
9
V
V
V
V
μ A
V
I B
V O
Leakage Current
Output Voltage
@ V B =0.5V BO (Max.) Max.
*see diagram 1 Min.
10
5
μ A
V
P D
I FRM
R θ ja
T J, T STG
Power Dissipation
Repetitive Peak Forward Current, Pulse Width=20 μ sec
Typical Thermal Resistance, Junction to Ambient (Note1)
Junction and Storage Temperature Range
150
2
400
-40 to +125
mW
A
° C/W
° C
* Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1. Valid provided that electrodes are kept at ambient temperature
? 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
1
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DB-3 | 功能描述:CONN CABLE GRIP ALUM .375-.437 RoHS:否 类别:线缆，导线 - 管理 >> 缆线固定扣 系列:DB 标准包装:50 系列:M23 B 类型:缆线钳 缆线直径:0.57" ~ 0.67"（14.5mm ~ 17.0mm） 螺纹尺寸:- 线芯中心尺寸:- 面板孔尺寸:- 材质:锌 包括:螺母，垫圈，密封 颜色:灰 其它名称:889-1111 |
| DB3 | 制造商:STMicroelectronics 功能描述:DIAC |
| DB3 | 制造商:STMicroelectronics 功能描述:DIAC, 32V, 2A, DO-35 制造商:STMicroelectronics 功能描述:DIAC, 32V, 2A, DO-35; Breakover Voltage Vbo Min:28V; Breakover Voltage Vbo Max:36V; Breakover Current Max.:100A; Thyristor Case:DO-35; No. of Pins:2; SVHC:No SVHC (18-Jun-2012); Alternate Case Style:SOD-27; Device Marking:DB3; Diode;RoHS Compliant: Yes |
| DB3_01 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:DIAC |
| DB3_03 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V |
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