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参数资料
| 型号： | DBFS225R17KE320 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模块 |
| 文件页数： | 1/7页 |
| 文件大小： | 292K |
| 代理商： | DBFS225R17KE320 |
1
Technische Information / technical information
FS200R06KL4
IGBT-Module
IGBT-modules
prepared by: Peter Kanschat
approved by: Robert Severin
date of publication: 2003-9-24
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
600
V
Kollektor-Dauergleichstrom
DC-collector current
T = 45°C
T = 25°C
I òó
I
200
225
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 45°C
I￠
400
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
695
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 200 A, V = 15 V, TY = 25°C
I = 200 A, V = 15 V, TY = 125°C
V ùèú
1,95
2,20
2,55
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 4,00 mA, V = V, TY = 25°C
Vúì
4,5
5,5
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
1,10
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
5,0
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
9,00
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,80
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 600 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 200 A, V = 300 V
V = ±15 V, Róò = 1,5 , TY = 25°C
V = ±15 V, Róò = 1,5 , TY = 125°C
tá óò
0,16
0,18
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 200 A, V = 300 V
V = ±15 V, Róò = 1,5 , TY = 25°C
V = ±15 V, Róò = 1,5 , TY = 125°C
t
0,04
0,05
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 200 A, V = 300 V
V = ±15 V, Ró = 1,5 , TY = 25°C
V = ±15 V, Ró = 1,5 , TY = 125°C
tá ó
0,25
0,29
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 200 A, V = 300 V
V = ±15 V, Ró = 1,5 , TY = 25°C
V = ±15 V, Ró = 1,5 , TY = 125°C
t
0,03
0,04
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 200 A, V = 300 V, L = 15 nH
V = ±15 V, Róò = 1,5 , TY = 25°C
V = ±15 V, Róò = 1,5 , TY = 125°C
Eóò
2,20
3,70
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 200 A, V = 300 V, L = 15 nH
V = ±15 V, Ró = 1,5 , TY = 25°C
V = ±15 V, Ró = 1,5 , TY = 125°C
Eó
4,35
6,30
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 360 V, Vèà = V -Lù ·di/dt
I
900
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,18
K/W
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