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参数资料
| 型号： | DBFZ600R17KE321 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模块 |
| 文件页数： | 2/7页 |
| 文件大小： | 229K |
| 代理商： | DBFZ600R17KE321 |
2
Technische Information / technical information
FZ600R12KE3
IGBT-Module
IGBT-modules
prepared by: Mark Münzer
approved by: Wilhelm Rusche
date of publication: 2003-10-13
revision: 3.2
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
1200
V
Dauergleichstrom
DC forward current
I
600
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
1200
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
72000
A2s
Charakteristische Werte / characteristic values
min.
typ.
1,65
1,65
max.
2,15
Durchlassspannung
forward voltage
I = 600 A, V = 0 V, TY = 25°C
I = 600 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 600 A, - di/dt = 7000 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
I￠
420
540
A
A
Sperrverzgerungsladung
recovered charge
I = 600 A, -di/dt = 7000 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Q
60,0
115
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 600 A, -di/dt = 7000 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Etê
28,0
52,0
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,08
K/W
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