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参数资料
| 型号： | DCP69A-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 1000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 179K |
| 代理商： | DCP69A-13 |
DCP69A/-16
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DCP68)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD -202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
2
3
4
1
4
3
2
1
C
B
E
3
1
2,4
BASE
COLLECTOR
EMITTER
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation @ TA = 25C (Note 3)
Pd
1
W
Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)
RθJA
125
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
V(BR)CES
-25
—
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-20
—
V
IC = -1.0mA, IB = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-25
—
V
IC = -10μA, IE = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
—
V
IE = -10μA, IC = 0
Collector-Base Cutoff Current
ICBO
—
-100
nA
VCB = -25V, IE = 0
Emitter-Base Cutoff Current
IEBO
—
-10
μA
VEB = -5.0V, IC = 0
ON CHARACTERISTICS
(Note 4)
IC = -5.0mA, VCE = -10V
IC = -500mA, VCE = -1.0V
IC = -1.0A,
VCE = -1.0V
DCP69A, DCP69A-16
50
85
40
—
375
—
DC Current Gain
DCP69A-16
hFE
100
—
250
—
IC = -500mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
—
-0.5
V
IC = -1.0A,
IB = -100mA
—
-0.6
—
IC = -5mA, VCE = 10V
Base-Emitter Turn-On Voltage
VBE (ON)
—
-1.0
V
IC = -1.0A, VCE = -1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
—
250
—
MHz
IC = -100mA, VCE = -5.0V
f = 100MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle < 2%.
DS31102 Rev. 6 - 3
1 of 4
www.diodes.com
DCP69A/-16
Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DCP69A-16 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP SURFACE MOUNT TRANSISTOR |
| DCP69A-16-13 | 功能描述:两极晶体管 - BJT 1W -20V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| DCP-6EC | 制造商:Farnell / Duratool 功能描述:DURTL PLR I/SPRING 6" COMBI 制造商:UNBRANDED 功能描述:PLR I/SPRING 6" COMBI |
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| DCP6I06780E000KS0M | 功能描述:薄膜电容器 780uF 600V 10% Male 85x120 RoHS:否 制造商:Cornell Dubilier 产品类型: 电介质:Polyester 电容:0.047 uF 容差:10 % 电压额定值:100 V 系列:225P 工作温度范围:- 55 C to + 85 C 端接类型:Radial 引线间隔:9.5 mm |
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