参数资料
型号: DD98N
英文描述: SCR / Diode Modules
中文描述: SCR /二极管模块
文件页数: 1/9页
文件大小: 219K
代理商: DD98N
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD98N
BIP AC / 94-08-01, K.-A. Rüther
A32/94
1/9
Seite/page
Stospitzensperrspannung
non-repetitive peak reverse voltage
DD98N
DD98N..K..-K
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
T
vj
= -40°C... T
vj max
V
RRM
2000
2200
2500
V
V
T
vj
= +25°C... T
vj max
V
RSM
2100
2300
2600
V
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
FRMSM
160 A
Dauergrenzstrom
average on-state current
T
C
= 100°C
I
FAVM
98 A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
2.400
2.000
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I2t
28.800
20.000
A2s
A2s
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
F
= 300 A
v
F
max.
1,53 V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,82 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
2 m
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
25 mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
V
ISOL
3,0
2,5
kV
kV
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Modul / per Module,
Θ
= 180° sin
pro Zweig / per arm,
Θ
= 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
R
thJC
max.
max.
max.
max.
0,195
0,390
0,185
0,370
°C/W
°C/W
°C/W
°C/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
pro Zweig / per arm
R
thCH
max.
max.
0,05
0,10
°C/W
°C/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
T
vj max
150 °C
Betriebstemperatur
operating temperature
T
c op
- 40...+150 °C
Lagertemperatur
storage temperature
T
stg
- 40...+150 °C
prepared by: C. Drilling
date of publication:
29.04.03
approved by: M. Leifeld
revision:
1
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