参数资料
型号: DDC144EU-7-F
厂商: DIODES INC
元件分类: 功率晶体管
英文描述: NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
中文描述: 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: GREEN, PLASTIC PACKAGE-6
文件页数: 2/6页
文件大小: 101K
代理商: DDC144EU-7-F
DS30345 Rev. 7 - 2
2 of 6
DDC (xxxx) U
www.diodes.com
Characteristic
Symbol
Min
0.5
0.5
0.3
0.5
0.5
Typ
1.1
1.1
Max
Unit
Test Condition
Input Voltage
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
V
l(off)
1.1
1.9
1.9
V
V
CC
= 5V, I
O
= 100 A
V
l(on)
1.9
3.0
3.0
1.4
1.1
3.0
V
O
= 0.3, I
O
= 5mA
V
O
= 0.3, I
O
= 2mA
V
O
= 0.3, I
O
= 1mA
V
O
= 0.3, I
O
= 5mA
V
O
= 0.3, I
O
= 10mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 10mA / 0.5mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 5mA / 0.25mA
I
O
/I
l
= 10mA / 0.5mA
Output Voltage
V
O(on)
0.1
0.3
V
Input Current
I
l
0.36
0.18
0.88
3.6
0.88
0.5
mA
V
I
= 5V
Output Current
I
O(off)
A
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
DC Current Gain
DDC124EU
DDC144EU
DDC114YU
DDC123JU
DDC114EU
G
l
56
68
68
80
30
-30
-20
Input Resistor (R
1
) Tolerance
Resistance Ratio Tolerance
R
1
+30
+20
%
R
2
/R
1
Gain-Bandwidth Product*
f
T
250
MHz
V
= 10V, I
E
= 5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
* Transistor - For Reference Only
Characteristic (DDC113TU & DDC143TU &
DDC114TU only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Symbol
Min
Typ
Max
Unit
Test Condition
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
50
50
5
V
V
V
A
A
I
C
= 50 A
I
C
= 1mA
I
E
= 50 A
V
CB
= 50V
V
EB
= 4V
0.5
0.5
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
/I
B
= 2.5mA / 0.25mA
I
C
/I
B
= 1mA / 0.1mA DDC114TU
I
C
/I
B
= 10mA / 1mA DDC113TU
I
C
= 1mA, V
CE
= 5V
DDC143TU
DC Current Transfer Ratio
Input Resistor (R
1
) Tolerance
Gain-Bandwidth Product*
h
FE
R
1
f
T
100
-30
250
600
+30
%
250
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
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