参数资料
型号: DDTA125TCA-7-F
厂商: DIODES INC
元件分类: 功率晶体管
英文描述: PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 4/4页
文件大小: 440K
代理商: DDTA125TCA-7-F
DS30335 Rev. 5 - 2
4 of 4
DDTA (R1-ONLY SERIES) CA
www.diodes.com
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at
www.diodes.com
are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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DDTA125TE 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
DDTA125TE-7 功能描述:开关晶体管 - 偏压电阻器 150MW 200KW RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DDTA125TE-7-F 功能描述:开关晶体管 - 偏压电阻器 150MW 200K RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DDTA125TKA 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
DDTA125TKA-7 功能描述:开关晶体管 - 偏压电阻器 200MW 200KW RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel