参数资料
型号: DDTD133HU-13
厂商: DIODES INC
元件分类: 小信号晶体管
英文描述: 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC PACKAGE-3
文件页数: 2/3页
文件大小: 71K
代理商: DDTD133HU-13
DS30382 Rev. 3 - 2
2 of 3
DDTD (xxxx) U
www.diodes.com
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(off)
0.5
0.3
V
VCC = 5V, IO = 100
mA
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Vl(on)
3.0
2.0
V
VO = 0.3V, IO = 20mA
VO = 0.3V, IO = 10mA
VO = 0.3V, IO = 30mA
VO = 0.3V, IO = 20mA
Output Voltage
VO(on)
0.3V
V
IO/Il = 50mA/2.5mA
Input Current
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Il
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
mA
VI = 5V
Output Current
IO(off)
0.5
mA
VCC = 50V, VI = 0V
DC Current Gain
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
Gl
33
39
47
56
47
56
VO = 5V, IO = 50mA
Gain-Bandwidth Product*
fT
200
MHz
VCE = 10V, IE = 5mA,
f = 100MHz
Electrical Characteristics
R1, R2 Types
@ TA = 25
°C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Transistor - For Reference Only
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
V
IC = 50
mA
Collector-Emitter Breakdown Voltage
BVCEO
40
V
IC = 1mA
Emitter-Base Breakdown Voltage
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
BVEBO
5
V
IE = 50
mA
IE = 50
mA
IE = 50
mA
IE = 720
mA
Collector Cutoff Current
ICBO
0.5
mA
VCB = 50V
Emitter Cutoff Current
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
IEBO
300
0.5
580
mA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
0.3
V
IC = 50mA, IB = 2.5mA
DC Current Transfer Ratio
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
hFE
100
56
250
600
IC = 5mA, VCE = 5V
Gain-Bandwidth Product*
fT
200
MHz
VCE = 10V, IE = -5mA,
f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
R1-Only, R2-Only Types
@ TA = 25
°C unless otherwise specified
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