参数资料
型号: DEIC421
厂商: IXYS
文件页数: 3/8页
文件大小: 0K
描述: RF MOSFET DRIVER 20 AMP
产品变化通告: DEIC421 Obsolescence 01/Feb/2012
标准包装: 1
配置: 低端
输入类型: 非反相
延迟时间: 32ns
电流 - 峰: 20A
配置数: 1
输出数: 1
电源电压: 8 V ~ 30 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 7-SMD
包装: 散装
其它名称: Q5970107
Q6251243
Q6428376G
DEIC421
RF MOSFET DRIVER
Lead Description
SYMBOL
VCC
IN
IN GND
OUT
GND
FUNCTION
Supply Voltage
Input
Input Ground
Output
Power Ground
DESCRIPTION
Positive power-supply voltage input. These leads provide power to the entire
chip. The range for this voltage is 8V to 30V.
Input signal. TTL and CMOS compatible. 5V to 8V optimum.
Input ground Kelvin connection.
Driver output. For application purposes, this lead is connected directly to the
gate of a MOSFET.
Power grounds should be connected to a low noise analog ground plane for
optimum performance.
Note: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do
not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 2 - Characteristics Test Diagram
Vcc
GND
10uF
+
Vcc
Choke
IN
OUT
C L
IN GND
Figure 3 - Timing Diagram
5V
90%
INPUT 2.5V
10%
Vcc
GND
0V
PW MIN
t ONDLY
t R
t OFFDLY
t F
Vcc
90%
OUTPUT
10%
0V
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