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参数资料
| 型号： | DEMO9RS08KA8 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 7/42页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO FOR MC9RS08KA8 |
| 产品培训模块： | USBSpyder08 Discovery Kit MC9RS08KA8 Microcontroller |
| 标准包装： | 1 |
| 系列： | RS08 |
| 类型： | MCU |
| 适用于相关产品： | MC9RS08KA8 |
| 所含物品： | 板，适配器，线缆，CD，文档 |
| 产品目录页面： | 730 (CN2011-ZH PDF) |
| 相关产品： | MC9RS08KA8CWJ-ND - IC MCU RS08 8KB FLASH 20-SOIC MC9RS08KA8CWG-ND - IC MCU RS08 8KB FLASH 16-SOIC |
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Electrical Characteristics
Table 4. Thermal Characteristics (continued)
Rating
Thermal resistance 16-pin TSSOP
Thermal resistance 20-pin PDIP
Thermal resistance 20-pin SOIC
Symbol
θ JA
θ JA
θ JA
Value
75
75
96
Unit
° C/W
° C/W
° C/W
The average chip-junction temperature (TJ) in ° C can be obtained from:
T J = T A + (P D × θ JA )
Eqn. 1
where:
T A = Ambient temperature, ° C
θ JA = Package thermal resistance, junction-to-ambient, ° C /W
P D = P int + P I/O
P int = I DD × V DD , Watts chip internal power
P I/O = Power dissipation on input and output pins user determined
For most applications, P I/O << P int and can be neglected. An approximate relationship between PD and TJ
(if P I/O is neglected) is:
P D = K ÷ (T J + 273 ° C)
Solving Equation 1 and Equation 2 for K gives:
K = P D × (T A + 273 ° C) + θ JA × (PD) 2
Eqn. 2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
P D (at equilibrium) for a known T A . Using this value of K, the values of P D and T J can be obtained by
solving equations 1 and 2 iteratively for any value of T A .
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
7
相关PDF资料 |
PDF描述 |
|---|---|
| DEMO9RS08KB12 | DEMO BOARD FOR 9RS08KA12 |
| DEMO9RS08LA8 | BOARD DEMO FOR MC9RSOLA8 MCU |
| DEMO9S08AC60E | BOARD DEMO FOR MC9S08A |
| DEMO9S08AW60E | DEMO BOARD FOR MC9S08AW60 |
| DEMO9S08FL16 | BOARD DEMO FOR FL16 FAMI |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DEMO9RS08KB12 | 功能描述:开发板和工具包 - S08 / S12 KB12 DEMO Board RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9RS08KB12 | 制造商:Freescale Semiconductor 功能描述:; LEADED PROCESS COMPATIBLE:YES; PEAK RE |
| DEMO9RS08LA8 | 功能描述:开发板和工具包 - S08 / S12 DEMO BOARD FOR LA8 RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9RS08LE4 | 功能描述:开发板和工具包 - S08 / S12 LE4 Family Demo Board RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9RS08SA12 | 功能描述:开发板和工具包 - S08 / S12 DEMO BOARD FOR SA12 PROD RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
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