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| 型号： | DEMO9S08LL16 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/44页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO FOR MC9S08LL16 MCU |
| 产品培训模块： | LCD Design Solutions MC9S08LL64/36 LCD MCU Introduction |
| 标准包装： | 1 |
| 系列： | HCS08 |
| 类型： | MCU |
| 适用于相关产品： | MC9S08LL16 |
| 所含物品： | 板，线缆，DVD |
| 产品目录页面： | 730 (CN2011-ZH PDF) |
| 相关产品： | MC9S08LG16CLF-ND - IC MCU 8BIT LG16 FLASH 48-LQFP MC9S08LG16CLH-ND - IC MCU 8BIT LG16 FLASH 64-LQFP |
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MC9S08LL16 Series MCU Data Sheet, Rev. 7
Electrical Characteristics
Freescale Semiconductor
12
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body Model
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Charge
Device
Model
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
±2000
—
V
2
Charge device model (CDM)
VCDM
±500
—
V
3
Latch-up current at TA = 85°CILAT
±100
—
mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DEMO9S08LL16 BOARD | 制造商:Freescale Semiconductor 功能描述:FREESCALE SEMICONDUCTOR LCD SC08 AND RS08 MCUS - Boxed Product (Development Kits) |
| DEMO9S08LL16 | 制造商:Freescale Semiconductor 功能描述:S08LL Demonstration Board |
| DEMO9S08MP16 | 功能描述:开发板和工具包 - S08 / S12 DEMO BOARD FOR MP16 FAMI RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9S08QB8 | 功能描述:开发板和工具包 - S08 / S12 LO COST DEMO BOARD RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
| DEMO9S08QD4 | 功能描述:开发板和工具包 - S08 / S12 BRD S08QD4 5V LOW-END 8 RoHS:否 产品:Development Kits 工具用于评估:MC9S12G128 核心:S12 接口类型:CAN, LIN, RS-232, USB 工作电源电压:5 V 制造商:Freescale Semiconductor |
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