参数资料
| 型号： | DF6A6.8FUT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS QUAD 75W 6.8V ESD SOT363 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 75W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
| 其它名称： | DF6A6.8FUT1OS |
DF3A6.8FUT1
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Symbol
V RWM
Working Peak Reverse Voltage
I F
I
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I R V F
I T
V
I T
I F
Test Current
Forward Current
V F
Z ZT
Z ZK
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Maximum Zener Impedance @ I ZK
I PP
Uni?Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Parameter
Forward Voltage
Zener Voltage (Note 4)
Operating Resistance (Note 5)
Symbol
V F
V Z
Z ZK
Conditions
I F = 10 mA
I ZT = 5 mA
I ZK = 0.5 mA
Min
6.4
Typ
0.8
6.8
Max
0.9
7.2
200
Unit
V
V
W
Z ZT
I ZT = 5 mA
50
W
Reverse Current
Clamping Voltage
I R1
V C
V RWM = 5 V
I PP = 2.0 A (Figure 1)
0.5
9.6
m A
V
I PP = 9.37 A (Figure 2)
ESD Protection
16
V
kV
Human Body Model (HBM)
Contact ? IEC61000?4?2
Air Discharge
16
30
30
4. V Z measured at pulse test current I ZT at an ambient temperature of 25 ° C.
5. Z ZT and Z ZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz.
http://onsemi.com
2
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