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| 型号： | DFLU1200-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 110K |
| 描述： | DIODE ULTRA FAST POWERDI 123 |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 200V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 980mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 25ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 200V |
| 电容@ Vr, F： | 27pF @ 4V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-SMD，扁平引线 |
| 供应商设备封装： | PowerDI? 123 |
| 包装： | 标准包装 |
| 产品目录页面： | 1597 (CN2011-ZH PDF) |
| 其它名称： | DFLU1200-7DIDKR |
DFLU1200
Document number: DS30601 Rev. 4 - 2
2 of 5
www.diodes.com
June 2013
? Diodes Incorporated
DFLU1200
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage (Note 3)
VRRM
VRWM
VR
200 V
RMS Reverse Voltage
VR(RMS)
140 V
Average Rectified Output Current (see figure 4)
IO
1.0 A
Thermal Characteristics
Characteristic Symbol Typ Max Unit
Power Dissipation (Note 5) @ TA = +25°C PD
?
1.0 W
Thermal Resistance Junction to Soldering Point (Note 6)
R?JS
?
6 °C/W
Thermal Resistance Junction to Ambient (Note 5) @TA = +25°C
R?JA
116
?
°C/W
Thermal Resistance Junction to Ambient (Note 7) @TA = +25°C
R?JA
182
?
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30 A
Forward Voltage Drop @ IF
= 0.6A
@ I
F
= 1.0A
VFM
0.90
0.98
V
Peak Reverse Current @ TA
= +25
?C
at Rated DC Blocking Voltage (Note 4) @ TA
= +100
?C
IRM
5.0
200
μA
Reverse Recovery Time (Note 8)
trr
25 ns
Typical Total Capacitance (f = 1MHz, VR
= 4VDC) C
T
27 pF
Notes: 4. Short duration pulse test used
to minimize self-heating effect.
5. Device mounted on 1" x 1", Polymide PCB; 2 oz. Cu pad lay
out as shown on Diodes Inc. suggested pad layout document AP02001.pdf.
6. Theoretical R
?JS
calculated from the top center of the die straig
ht down to the PCB cathode tab solder junction.
7. Device mounted on FR-4 PCB, 2 oz. Copper, minimum recommended pad layout pattern per http://www.diodes.com/datasheets/ap02001.pdf
8. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 7.
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