参数资料
型号: DG2001DV-T1-E3
厂商: Vishay Siliconix
文件页数: 3/13页
文件大小: 0K
描述: IC ANLG SWITCH SPDT LV 6TSOP
标准包装: 3,000
功能: 开关
电路: 1 x SPDT - NC/NO
导通状态电阻: 7 欧姆
电压电源: 单电源
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
电流 - 电源: 10nA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.065",1.65mm 宽)
供应商设备封装: 6-TSOP
包装: 带卷 (TR)
AN823
Vishay Siliconix
www.vishay.com
2
Document Number: 71743
27-Feb-04
255 260_C
1X4_C/s (max)
3-6_C/s (max)
10 s (max)
Reflow Zone
Pre-Heating Zone
3_C/s (max)
140 170_C
Maximum peak temperature at 240_C is allowed.
FIGURE 3.
Solder Reflow Temperature and Time Durations
60-120 s (min)
217_C
60 s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
thermal
resistance,
Rqjc,
or
the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
VGS = 4.5 V
ID = 6.1 A
On-Resistance vs. Junction Temperature
TJ Junction Temperature (_C)
FIGURE 4.
Si3434DV
r DS
(on)
On-Resiistance (Normalized)
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