参数资料
| 型号： | DG2012DL-T1-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC ANALOG SWITCH SPDT SC70-6 |
| 标准包装： | 3,000 |
| 功能： | 开关 |
| 电路： | 1 x SPDT - NC/NO |
| 导通状态电阻： | 1.8 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 10nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 带卷 (TR) |
Vishay Siliconix
DG2012
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
1
Low-Voltage Single SPDT Analog Switch
FEATURES
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rDS(on): 1 Ω Typ.
Fast Switching - tON: 17 ns, tOFF: 13 ns
Low Leakage
TTL/CMOS Compatible
6-Pin SC-70 Package
BENEFITS
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
APPLICATIONS
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
DESCRIPTION
The DG2012 is a single-pole/double-throw monolithic CMOS
analog switch designed for high performance switching of
analog
signals.
Combining
low
power,
high
speed
(tON: 17 ns, tOFF: 13 ns), low on-resistance (rDS(on): 1 Ω) and
small physical size (SC70), the DG2012 is ideal for portable
and
battery
powered
applications
requiring
high
performance and efficient use of board space.
The DG2012 is built on Vishay Siliconix’s low voltage
submicron CMOS process. An epitaxial layer prevents
latchup. Break-before -make is guaranteed for DG2012.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
* Pb containing terminations are not RoHS compliant, exemptions may apply
NO (Source1)
COM
NC (Source2)
1
2
3
6
5
Top View
IN
V+
GND
4
SC-70
Device Marking: E7xx
TRUTH TABLE
Logic
NC
NO
0ON
OFF
1OFF
ON
ORDERING INFORMATION
Temp Range
Package
Part Number
- 40 to 85 °C
SC70-6
DG2012DL-T1
DG2012DL-T1-E3
Available
Pb-free
RoHS*
COMPLIANT
相关PDF资料 |
PDF描述 |
|---|---|
| DG2015DN-T1-E4 | IC SWITCH DUAL DPDT 16QFN |
| DG2016DQ-T1-E3 | IC SWITCH DUAL SPDT 10MSOP |
| DG2017DN-T1-E4 | IC SWITCH DUAL SPDT 16QFN |
| DG2019DN-T1-E4 | IC SWITCH DUAL SPDT 16QFN |
| DG201BDQ-E3 | IC SWITCH ANA QUAD CMOS 16TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DG2012DL-T1-GE3 | 制造商:Vishay Siliconix 功能描述:LOW VOLFAGE SPDT ANALOG SWITCH - Tape and Reel |
| DG2015 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low-Voltage, Low RON, Dual DPDT Analog Switch |
| DG2015_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low-Voltage, Low RON, Dual DPDT Analog Switch |
| DG2015DN | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Low-Voltage, Low rON, Dual DPDT Analog Switch |
| DG2015DN-T1-E4 | 功能描述:模拟开关 IC Low Volt Quad SPDT RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
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